Trapping centers in undoped GaS layered single crystals

Nominally undoped p-GaS layered single crystals were grown using the Bridgman technique. Thermally stimulated current measurements in the temperature range 10–300 K were performed at a heating rate of 0.10 K/s. The analysis of the data revealed six trap levels at 0.05, 0.06, 0.12, 0.63, 0.71, and 0.75 eV. The calculations for these traps yielded 1.2×10-21, 2.9×10-23, 2.4×10-21, 8.0×10-9, 1.9×10-9 and 4.3×10-10 cm2 for the capture cross sections and 1.6×1013, 5.0×1012, 7.3×1012, 1.2×1014, 8.9×1013 and 2.6×1013 cm-3 for the concentrations, respectively.