Synthesis of highly dispersed silicon carbide powders by a solvothermal-assisted sol–gel process
Source abstract
Abstract
Highly dispersed silicon carbide powders were prepared by a solvothermal-assisted sol–gel process with tetraethyl orthosilicate and phenolic resin as starting materials and carbothermal reduction reactions at a relatively low temperature (1400–1600 °C). Investigated by X-ray diffraction, transmission electron microscopy, scanning electron microscope and the nitrogen adsorption–desorption isotherm measurements, the obtained SiC powders had an average crystallite size of 200 nm and high specific surfaces areas of 149 m2/g. Besides, mechanism for preparation of highly dispersed SiC powders was proposed.
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Research context
OpenAlex topics: Advanced ceramic materials synthesis · Advanced materials and composites · Diamond and Carbon-based Materials Research
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