Chemical etching of silicon by CO2-laser-induced dissociation of NF3
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OpenAlex topics: Ion-surface interactions and analysis · Diamond and Carbon-based Materials Research · Laser Material Processing Techniques
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References (41)
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4. In a private communication, J. Lyman (Los Alamos National Scientific Laboratory) stated that CO2-laser-induced dissociation of NF3 was observed in his laboratory in the early 1970's but never reported
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33. A simple calculation shows that reaction of vibrationally excited NF3 with the silicon surface is an unlikely event. A value for the NF3 self-diffusion coefficient at 100 Torr of ∼0.6 cm2/s can be obtained from the standard kinetic theory equations [J.O. Hirschfelder, C.F. Curtis, R.B. Bird:Molecular Theory of Gases and Liquids (Wiley, New York 1954) Chap. 8]. With this value, the time to diffuse the minimum 3 mm distance between focal volume and QCM surface is t=r2/4D=36 ms. In this time roughly 3×108 collisions will occur. Assuming a V-T collision number of 106 (the actual collision number may be 1–2 orders of magnitude less), NF3 will be thermally relaxed by the time it contacts the surface
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