journal article·2003-03-01

Catalytic growth and characterization of Ga 2 O 3 nanowires

K.-W. Chang, J.-J. Wu

Publisher page

Abstract

β-Ga2O3 nanowires have been synthesized using Ga metal and H2O vapor at 800 °C in the presence of Ni catalyst on the substrate. Remarkable reduction of the diameter and increase of the length of the Ga2O3 nanowires are achieved by separation of Ga metal and H2O vapor before they reach the substrate. Transmission electron microscopy analyses indicate that the β-Ga2O3 nanowires possess a single-crystalline structure. Photoluminescence measurements show two broad emission bands centered at 290 nm and 390 nm at room temperature.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Ga2O3 and related materials · Advanced Photocatalysis Techniques · Electronic and Structural Properties of Oxides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References

Reference metadata was not supplied for this record.