journal article·1989-05

High frequency characterisation of double drift region InP and GaAs diodes

J. P. Banerjee, S. P. Pati, S. K. Roy

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Radio Frequency Integrated Circuit Design · Microwave Engineering and Waveguides · Semiconductor Quantum Structures and Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (18)

Show source-provided references
1. J.P. Banerjee, S.P. Pati, S.K. Roy: Indian J. Pure Appl. Phys.21, 661 (1983)
2. S.M. Sze, R.M. Ryder: Proc. IEEE59, 1140 (1972)10.1109/PROC.1971.8360 ↗
3. S.K. Roy, M. Sridharan, R. Ghosh, B.B. Pal: Proc. of the NASECODE-I Conf. on Numerical Analysis of Semiconductor Devices (Dublin, Ireland 1979) p. 266
4. D.N. Dutta, S.P. Pati, J.P. Banerjee, B.B. Pal, S.K. Roy: IEEE Trans. ED-29, 1819 (1982)
5. L.W. Cook, G.E. Bulman, G.E. Stillman: Appl. Phys. Lett.40, 589 (1982)10.1063/1.93190 ↗
6. M. Ito, S. Kagawa, T. Kaneda, T. Yamoka: J. Appl. Phys.49, 4607 (1978)10.1063/1.325443 ↗
7. P. Bauhahn, G.I. Haddad: IEEE Trans. ED-24, 634 (1977)10.1109/T-ED.1977.18795 ↗
8. D.L. Scharfetter, H.K. Gummel: IEEE Trans. ED-16, 64 (1969)10.1109/T-ED.1969.16566 ↗
9. H.K. Gummel, J.L. Blue: IEEE Trans. ED-14, 569 (1967)10.1109/T-ED.1967.16005 ↗
10. S.K. Roy, J.P. Banerjee, S.P. Pati: Proc. of NASECODE-IV Conf. on Numerical Analysis of Semiconductor Devices (Dublin, Ireland 1985) p. 494
11. Hewlett Packard Application Notes, 935
12. T.E. Seidel, D.L. Scharfetter: Proc. IEEE58, 1135 (1970)10.1109/PROC.1970.7861 ↗
13. M. Sridharan, S.K. Roy: Solid State Electron.23, 1003 (1980)10.1016/0038-1101(80)90070-2 ↗
14. S.M. Sze:Physics of Semiconductor Devices (Wiley, New York 1969)
15. J.J. Berenz, F.B. Fank, T.L. Hierl: Electron. Lett.14, 683 (1978)10.1049/el:19780461 ↗
16. H.C. Huang, P.A. Levine, A.R. Gobat, J.B. Klatskin: Proc. IEEE60, 464 (1972)10.1109/PROC.1972.8670 ↗
17. K. Chang, J.K. Kung, P.G. Asher, G.M. Hayashibara, R.S. Ying: Electron. Lett.17, 471 (1981)10.1049/el:19810329 ↗
18. M. Ito, S. Kagawa, T. Kaneda, T. Yamaoka: J. Appl. Phys.49, 4607 (1978)10.1063/1.325443 ↗