Resistive switching behavior in a Ni–Ag2Se–Ni nanowire
Source abstract
Abstract
Hysteretic resistive switching behavior in a silver selenide (Ag2Se) nanowire, which had a diameter of about 200 nm and a length of about 10 μm, was studied using scanning probe microscopy. Electrical current measurements were carried out in a range from 0 to −10 V and in temperatures below and above the phase transition of Ag2Se. ON/OFF switching times were measured with pulsed voltages. They displayed different characteristics at low and high temperatures. The results confirm that Ag2Se nanowires have applications in nanoscale switching devices.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Phase-change materials and chalcogenides · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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