Ion-beam sputtering deposition of CsI thin films
Source abstract
Abstract
Stoichiometric CsI thin films were deposited by Ar ion-beam sputtering of a CsI target at room temperature. The sputtered 100-nm thick CsI films obtained were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), atomic force microscopy (AFM) and quantum efficiency (QE) measurements. As it was expected, the chemical, morphological, crystalline and photo-emissive properties of CsI films obtained depended on the deposition parameters. Comparison with results obtained for evaporated CsI films indicated that surface morphology, i.e., the effective photo-emissive surface area, is one of the important parameters in influencing the QE .
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Ion-surface interactions and analysis · Electronic and Structural Properties of Oxides
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References (13)
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