The influence of the solubility limit on diffusion of phosphorus and arsenic into silicon
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Semiconductor materials and interfaces · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (29)
Show source-provided references
1. E. Antoncik: Nucl. Instrum. Methods B 14, 193 (1986); Radiat. Eff. 88, 217 (1986)10.1016/0168-583X(86)90044-3 ↗
2. E. Antoncik: Radiat. Eff. Def. Solids 116, 375 (1991)10.1080/10420159108220743 ↗
3. E. Antoncik: Radiat. Eff. Def. Solids 118, 371 (1991)10.1080/10420159108220762 ↗
4. E. Antoncik: Radiat. Eff. Def. Solids 125, 355 (1993); to be published10.1080/10420159308220212 ↗
5. E. Antoncik: Appl. Phys. A 56, 298 (1993)
6. E. Antoncik: Radiat. Eff. Def. Solids (1993), to be published
7. E. Antoncik: Proc. 1st Int'l Rapid Thermal Processing Conf., Scottsdale, AZ, USA, 1993 p. 205
8. See e.g., J.C.C. Tsai: In VLSI Technology, ed. by S.M. Sze (McGraw-Hill, New York 1985) p. 169 and references therein R.B. Fair: In Impurity Doping, ed. by F.F.Y. Wang (North-Holland, New York 1981) and references therein
9. See e.g., U. G�sele: In Microelectronic Materials and Processes, ed. by R.A. Levy, NATO ASI Series, Vol. E 164, 583 (1989) and references therein10.1007/978-1-4613-0541-5 ↗
10. R. Capelletti: Radiat. Eff. 74, 119 (1983)10.1080/00337578308218404 ↗
11. G. Masetti, D. Nobili, S. Solmi: Semiconductor Silicon 1977, Ed. by H.R. Huff, E. Sirtl (Electrochem. Soc. Princeton, Princeton 1977) p. 648
12. P. Negrini, D. Nobili, S. Solmi: J. Electrochem. Soc. 122, 1254 (1975)10.1149/1.2134437 ↗
13. S. Solmi, G. Gelotti, D. Nobili, P. Negrini: J. Electrochem. Soc. 123, 654 (1976)10.1149/1.2132905 ↗
14. See e.g., D. Mathiot, J.C. Pfister: Appl. Phys. Lett. 47, 962 (1985)10.1063/1.95944 ↗
15. E. Antoncik: In preparation
16. S. Solmi, R. Angelucci, M. Merli: Eur. Trans. Telecom. Rel. Tech. 1, 159 (1990)10.1002/ett.4460010214 ↗
17. V.A. Panteleev: Sov. Phys.-Solid State 21, 1956 (1979)
18. S.M. Hu, P.M. Fahey, R.W. Dutton: J. Appl. Phys. 54, 6912 (1983)10.1063/1.331998 ↗
19. P.M. Fahey, P.B. Griffin, J.D. Plummer: Rev. Mod. Phys. 61, 289 (1989)10.1103/RevModPhys.61.289 ↗
20. See e.g., S.T. Pantelides: In Deep Centres in Semiconductors, ed. by S.T. Pantelides (Gordon and Breach, New York 1968) p. 1
21. See e.g., A.N. Larsen, S.Yu. Shiraev, E.S. S�rensen, P. Tidemand-Petersson: Appl. Phys. Lett. 48, 1805 (1986)10.1063/1.96793 ↗
22. The problem of the existence and evaluation of D eff is not quite trivial. The reader is referred to [6] for more details
23. E. Antoncik: In preparation
24. See e.g., D. Mathiot, S. Martin: J. Appl. Phys. 70, 3071 (1991)10.1063/1.349312 ↗
25. S. Matsumoto, T. Niimi, J. Murota, E. Arai: J. Electrochem. Soc. 127, 1650 (1980)10.1149/1.2129969 ↗
26. J. Murota, E., Arai, K. Kobayashi, K. Kudo: J. Appl. Phys. 50, 804 (1979)10.1063/1.325993 ↗
27. D.P. Kennedy, P.C. Murley: Proc. IEEE 59, 355 (1971)10.1109/PROC.1971.8172 ↗
28. E. Antoncik: In preparation
29. D. Nobili, A. Carabelas, G. Celotti, S. Solmi: J. Electrochem. Soc. 130, 922 (1983)10.1149/1.2119859 ↗