Single intermediate-band solar cells of InGaN/InN quantum dot supracrystals
Source abstract
Abstract
In this paper, an intermediate-band solar cell (IBSC) with only one IB was designed, where the three-dimensional In x Ga1−x N/InN quantum dot supracrystals were regularly arrayed in the i layer of the p-i-n type structural cell. IB characteristics such as position and width derived from discrete quantized energy levels in quantum dots were determined via solving the Schrodinger equation with the Kronig-Penny model. The principle of detailed balance was used to deal with the photoelectric conversion process in the IBSC. Characteristic parameters of the cell such as open circuit voltage, short circuit current density, and photoelectric conversion efficiency were numerically calculated. The influence of In content, average size of QDs, and interdot spacing on the cell performance was further analyzed.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Nanowire Synthesis and Applications
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References (12)
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1. A. Luque, A. Martí, Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels. Phys. Rev. Lett. 78(26), 5014 (1997)10.1103/PhysRevLett.78.5014 ↗
2. S. Tomić, T.S. Jones, N.M. Harrison, Absorption characteristics of a quantum dot array induced intermediate band: implications for solar cell design. Appl. Phys. Lett. 93(26), 263105 (2008)10.1063/1.3058716 ↗
3. S. Jenks, R. Gilmore, Quantum dots solar cell: materials that produce two intermediate bands. J. Renew. Sustain. Energy 2(1), 013111 (2010)10.1063/1.3327817 ↗
4. K. Sánchez, I. Aguilera, P. Palacios, P. Wahnón, Active materials based on implanted Si for obtaining intermediate-band solar cells. Adv. Sci. Technol. 74(1), 151 (2010)10.4028/www.scientific.net/AST.74.151 ↗
5. O.L. Lazarenkova, A.A. Balandin, Miniband formation in a quantum dot crystal. J. Appl. Phys. 89(10), 5509 (2001)10.1063/1.1366662 ↗
6. W. Shockley, H.J. Queisser, Detailed balance limit of efficiency of p-n junction solar cells. J. Appl. Phys. 32(3), 510 (1961)10.1063/1.1736034 ↗
7. L. Cuadra, A. Martí, A. Luque, Present status of intermediate band solar cell research. Thin Solid Films 451–452(3), 593 (2004)10.1016/j.tsf.2003.11.047 ↗
8. I. Vurgaftman, J.P. Meyer, R. Mohan, Band parameters for III-V compound semiconductors and their alloys. J. Appl. Phys. 89(11), 5815 (2001)10.1063/1.1368156 ↗
9. J. Wu, W. Walukiewicz, K. Yu, Small band gap bowing in In1−x Ga x N alloys. Appl. Phys. Lett. 80(25), 4741 (2002)10.1063/1.1489481 ↗
10. G. Bastard, Theoretical investigations of superlattice band structure in the envelope-function approximation. Phys. Rev. B 25(12), 7584 (1982)10.1103/PhysRevB.25.7584 ↗
11. Q. Deng, X. Wang, C. Yang, H. Xiao, C. Wang, H. Yin, Computational investigation of In x Ga1−x N/InN quantum-dot intermediate-band solar cell. Chin. Phys. Lett. 28(1), 018401 (2011)10.1088/0256-307X/28/1/018401 ↗
12. A. Luque, A. Martí, N. Lopez, Experimental analysis of the quasi-Fermi level split in quantum dot intermediate-band solar cells. Appl. Phys. Lett. 87(8), 083503 (2005)10.1063/1.2034090 ↗