Femtosecond dynamics and transport of optically excited electrons in epitaxial Cu films on Si(111)-7×7
Source abstract
Abstract
Time-resolved two-photon photoemission spectroscopy is used to study ultrafast electron dynamics of epitaxial Cu films grown in situ on a Si(111)-7×7 substrate with 6 to 44 nm thickness. For excitation with femtosecond laser pulses at hν=2.35 eV a pronounced increase of the electron relaxation rates is observed with increasing film thickness and even further in comparison to bulk data. This is attributed to an enhanced energy dissipation in thicker films due to transport of excited carriers into the bulk.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Electron and X-Ray Spectroscopy Techniques · Ion-surface interactions and analysis · Surface and Thin Film Phenomena
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References (11)
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