Dependence of photoconductivity on the crystallite orientations and porosity of polycrystalline ZnO films
Source abstract
Abstract
Hexagonal ZnO films deposited on quartz glass, sapphire and glass substrates by sol–gel coating are found to be randomly oriented; maximum randomness is found in the film on quartz glass substrate. All the films are ultra-violet (UV) sensitive at around 360 nm sensitivity being maximum for the film with maximum randomness in the crystallite orientations. The film on quartz showed the lowest dark current and maximum photoresponse, which is related to the lowering of the barrier heights, introduced by the adsorbed oxygen at the grain boundaries. Faster decay in photocurrent is observed for the film deposited on glass, which is attributed due to the smaller crystallite sizes with porous microstructure of the film.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (24)
Show source-provided references
1. M. Razeghi, A. Rogalski: J. Appl. Phys. 79, 7433 (1996)10.1063/1.362677 ↗
2. Y.A. Goldberg: Semicond. Sci. Technol. 14, R41 (1999)10.1088/0268-1242/14/7/201 ↗
3. F. Vigué, E. Tournié, J.-P. Faurie, E. Monroy, F. Calle, E. Muñoz: Appl. Phys. Lett. 78, 4190 (2001)10.1063/1.1381415 ↗
4. Y.F. Chen, H.J. Ko, S.K. Hong, T. Sekiuchi, T. Yao, Y. Segawa: J. Vac. Sci. Technol. B 18, 1514 (2000)10.1116/1.591416 ↗
5. D.H. Zhang, D.E. Brodie: Thin Solid Films 238, 95 (1994)10.1016/0040-6090(94)90655-6 ↗
6. Y. Takahashi, M. Kanamori, A. Kondoh, H. Minoura, Y. Ohya: Jpn. J. Appl. Phys. 33, 6611 (1994)10.1143/JJAP.33.6611 ↗
7. S.A. Studenikin, N. Golego, M. Cocivera: J. Appl. Phys. 87, 2413 (2000)10.1063/1.372194 ↗
8. A.M. Fernandez, P.J. Sebastian: J. Phys. D 26, 2001 (1993)10.1088/0022-3727/26/11/024 ↗
9. S. Liang, H. Sheng, Y. Liu, Z. Huo, Y. Lu, H. Shen: J. Cryst. Growth 225, 110 (2001)10.1016/S0022-0248(01)00830-2 ↗
10. M. Liu, H.K. Kim: Appl. Phys. Lett. 84, 173 (2004)10.1063/1.1640468 ↗
11. S.R. Morrison: Adv. Catalysis 7, 249 (1955)
12. Y. Liu, C.R. Gorla, S. Liang, N. Emanetoglu, Y. Lu, H. Shen, M. Wraback: J. Electron. Mater. 29, 69 (2000)10.1007/s11664-000-0097-1 ↗
13. H. Fabricius, T. Skettrup, P. Bisgaard: Appl. Opt. 25, 2764 (1986)10.1364/AO.25.002764 ↗
14. D.H. Zhang: J. Phys. D. 28, 1273 (1995)10.1088/0022-3727/28/6/034 ↗
15. D.H. Zhang, D.E. Brodie: Thin Solid Films 251, 151 (1994)10.1016/0040-6090(94)90681-5 ↗
16. T.L. Tansley, D.F. Neely: Thin Solid Films 121, 95 (1984)10.1016/0040-6090(84)90231-1 ↗
17. T.L. Tansley, D.F. Neely, C.P. Foley: Thin Solid Films 117, 19 (1984)10.1016/0040-6090(84)90190-1 ↗
18. P. Sharma, A. Mansingh, K. Sreenivas: Appl. Phys. Lett. 80, 553 (2002)10.1063/1.1445480 ↗
19. R. Ghosh, D. Basak, S. Fujihara: J. Appl. Phys. 96, 2689 (2004)10.1063/1.1769598 ↗
20. Z. Jiwei, Z. Liangying, Y. Xi: Ceramics Internationals 26, 883 (2000)10.1016/S0272-8842(00)00031-6 ↗
21. M. Ohyama, H. Kozuka, T. Yoko: J. Am. Ceram. Soc. 81, 1622 (1998)10.1111/j.1151-2916.1998.tb02524.x ↗
22. Y. Natsume, H. Sakata: Thin Solid Films 372, 30 (2000)10.1016/S0040-6090(00)01056-7 ↗
23. S. Fujihara, C. Sasaki, T. Kimura: Appl. Surface Sci. 180, 341 (2001)10.1016/S0169-4332(01)00367-1 ↗
24. D. Basak, G. Amin, B. Mallik, G.K. Paul, S.K. Sen: J. Cryst. Growth 256, 73 (2003)10.1016/S0022-0248(03)01304-6 ↗