Performance improvement of phase-change memory cell with Ge2Sb2Te5-HfO2 composite films
Source abstract
Abstract
The phase-change characteristics of Ge2Sb2Te5 (GST) films for phase-change random access memory (PCM) devices were improved by incorporating HfO2 into GST film using cosputtering at room temperature. Phase separation (GST-rich nanocrystals were surrounded by HfO2-rich amorphous phase) has been observed in annealed GST-HfO2 composite films and the segregated domains exhibited a relatively uniform size. The reduced reset voltage of GST-HfO2 based cell was due to the reduced programming volume by incorporating HfO2 into GST. This work clearly reveals the highly promising potential of GST-HfO2 composite films for application in PCM.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Liquid Crystal Research Advancements
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References (20)
Show source-provided references
1. S.R. Ovshinsky, Phys. Rev. Lett. 21, 1450 (1968)10.1103/PhysRevLett.21.1450 ↗
2. M. Wuttig, N. Yamada, Nature Mater. 6, 824 (2007)10.1038/nmat2009 ↗
3. A.V. Kolobov, P. Fons, A.I. Frenkel, A.L. Ankudinov, J. Tominaga, T. Uruga, Nature Mater. 3, 703 (2004)10.1038/nmat1215 ↗
4. S. Lai, T. Lowrey, Tech. Dig.—Int. Electron Devices Meet. 2001, 243 (2001)
5. N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira, M. Takao, J. Appl. Phys. 69, 2849 (1991)10.1063/1.348620 ↗
6. V. Weidenhof, I. Friedrich, S. Ziegler, M. Wuttig, J. Appl. Phys. 86, 5879 (1999)10.1063/1.371606 ↗
7. J.H. Kim, J. Appl. Phys. 86, 6770 (1999)10.1063/1.371725 ↗
8. L.C. Wu, Z.T. Song, F. Rao, Y.F. Gong, B. Liu, L.Y. Wang, W.L. Liu, S.L. Feng, Appl. Phys. Lett. 93, 103107 (2008)
9. Y.K. Kim, K. Jeong, M.H. Cho, U. Hwang, H.S. Jeong, K.N. Kim, Appl. Phys. Lett. 90, 171920 (2007)
10. N. Matsuzaki, K. Kurotsuchi, Y. Matsui, O. Tonomura, N. Yamamoto, Y. Fujisaki, N. Kitai, R. Takemura, K. Osada, S. Hanzawa, H. Moriya, T. Iwasaki, T. Kawahara, N. Takaura, M. Matsuoka, M. Moniwa, Tech. Dig.—Int. Electron Devices Meet. 2005, 738 (2005)
11. Y. Ling, Y.Y. Lin, B.W. Qiao, Y.F. Lai, J. Feng, T.A. Tang, B.C. Cai, B. Chen, Jpn. J. Appl. Phys. 45(12), 349 (2006)10.1143/JJAP.45.L349 ↗
12. S.W. Ryu, J.H. Oh, B.J. Choi, S.-Y. Hwang, S.K. Hong, C.S. Hwang, H.J. Kim, Electrochem. Solid-State Lett. 9, G259 (2006)10.1149/1.2205120 ↗
13. J. Noh, D. Suh, S. Lee, K. Kim, W. Shin, E. Lee, Y. Kang, J. Park, K. Kim, Y. Khang, Mater. Res. Soc. Symp. Proc. 888, V05–09 (2006)
14. K.H. Song, S.W. Kim, J.H. Seo, H.Y. Lee, J. Appl. Phys. 104, 103516 (2008)
15. S.W. Ryu, J.H. Oh, J.H. Lee, B.J. Choi, W. Kim, S.K. Hong, C.S. Hwang, H.J. Kim, Appl. Phys. Lett. 92, 142110 (2008)
16. A.L. Greer, Nature (London) 336, 303 (1993)10.1038/366303a0 ↗
17. T.Y. Lee, S.S. Yim, D.B. Lee, M.H. Lee, D.H. Ahn, K.B. Kim, Appl. Phys. Lett. 89, 163503 (2006)
18. J. Feng, Z.F. Zhang, Y. Zhang, B.C. Cai, Y.Y. Lin, T.A. Tang, B. Chen, J. Appl. Phys. 101, 074502 (2007)
19. W.K. Njoroge, H.W. Woltgens, M. Wuttig, J. Vac. Sci. Technol. A 20, 230 (2002)10.1116/1.1430249 ↗
20. D. Lee, S.S. Yim, H.K. Lyeo, M.H. Kwon, D. Kang, H.G. Jun, S.W. Nam, K.B. Kim, Electrochem. Solid-State Lett. 13(2), K8 (2010)10.1149/1.3264734 ↗