Investigation of electron beam induced phase change in Si2Sb2Te5 material
Source abstract
Abstract
The Si2Sb2Te5 phase change material for applications of chalcogenide random access memory was investigated. Electron irradiation induced crystallization in a nano-sized area was studied by means of in situ transmission electron microscopy and selected area electron diffraction. Amorphous Si2Sb2Te5 film changes to a polycrystalline state after electron beam exposure with sufficiently high energy and after a long time. Crystallization of the film strongly depends on the electron beam energy, current density, as well as exposure time. According to our study, the electron beam induced crystallization is a displacement damage dominant process.
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Glass properties and applications
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References (18)
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