Thermoelectric properties of manganese silicide films

Manganese silicide films (MnSi and MnSi1.73) were grown on silicon and glass substrates. The films were characterized by X-ray diffraction, Auger electron spectroscopy, and thermoelectric measurements. The films were n-type when they were deposited on n-type (100) silicon substrates with resistivity of 3–5 ohm-cm. P-type films were obtained when the films were deposited on glass or n-type (100) silicon substrates with resistivity of greater than 6000 ohm-cm. An analysis of the resistivity data in the intrinsic regime suggests that MnSi1.7 has an energy gap of 0.984 eV.