journal article·1994-09

Modified methods for the calculation of real Schottky-diode parameters

D. Gromov, V. Pugachevich

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Research context

OpenAlex topics: Semiconductor materials and interfaces · Integrated Circuits and Semiconductor Failure Analysis · Silicon Carbide Semiconductor Technologies

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References (8)

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1. H. Norde: J. Appl. Phys. 50, 5052 (1979)10.1063/1.325607 ↗
2. C.-D. Lien, F.G.T. So, M.-A. Nicolet: IEEE Trans. ED-31, 1502 (1984)10.1109/T-ED.1984.21739 ↗
3. R.M. Cibils, R.H. Buitrado: J. Appl. Phys. 58, 1075 (1985)10.1063/1.336222 ↗
4. K. Sato, Y. Yasumura: J. Appl. Phys. 58, 3655 (1985)10.1063/1.335750 ↗
5. K.E. Bohlin: J. Appl. Phys. 60, 1223 (1986)10.1063/1.337372 ↗
6. J.H. Werner: Appl. Phys. A 47, 291 (1988)10.1007/BF00615935 ↗
7. K.N. Tu: J. Vac. Sci. Technol. 19, 766 (1981)10.1116/1.571147 ↗
8. S.P. Murarka: Silicides for VLSI Applications (Academic, New York 1983) p. 150