journal article·1990-01

Growth, shrinkage, and stability of interfacial oxide layers between directly bonded silicon wafers

K.-Y. Ahn, R. Stengl, T. Y. Tan, U. G�sele, P. Smith

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: 3D IC and TSV technologies · Advanced Surface Polishing Techniques · Thin-Film Transistor Technologies

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