journal article·1999-05-01

Growth of wurtzite GaN films on αAl 2 O 3 substrates using light-radiation heating metal-organic chemical vapor deposition

B. Shen, Y.G. Zhou, Z.Z. Chen, P. Chen, R. Zhang, Y. Shi, Y.D. Zheng, W. Tong, W. Park

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Abstract

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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties

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