journal article·2005-05

Ordered tellurium nanowire arrays and their optical properties

A. Zhao, L. Zhang, Y. Pang, C. Ye

Applied Physics A· Volume 80· Issue 8
Publisher page

Abstract

High-density tellurium (Te) nanowire arrays were prepared in the nanochannels of an anodic aluminum membrane (AAM) template using the electrochemical deposition method. The as-synthesized Te nanowires, typically 60 nm in diameter and up to 40 μm in length, possess a hexagonal single crystalline structure following [001] growth direction. The optical polarization properties of Te nanowire arrays embedded in AAM were investigated using an optic parameter oscillator in the wavelength range from 0.7 to 1 μm. The high optical polarization of the Te nanowire arrays embedded in the AAM assembly system was observed.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Nanowire Synthesis and Applications · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (19)

Show source-provided references
1. T. Someya, H. Akiyama, H. Sakaki: Phys. Rev. Lett. 74, 3664 (1995)10.1103/PhysRevLett.74.3664 ↗
2. X. Duan, Y. Huang, Y. Cui, J. Wang, C.M. Lieber: Nature 409, 66 (2001)10.1038/35051047 ↗
3. F. Vouilloz, D.Y. Oberli, M.-A. Dupertuis, A. Gustafsson, F. Reinhardt, E. Kapon: Phys. Rev. B 57, 12378 (1998)10.1103/PhysRevB.57.12378 ↗
4. J. Wang, M.S. Gudiksen, X. Duan, Y. Cui, and C.M. Lieber: Science 293, 1455 (2001)10.1126/science.1062340 ↗
5. J. Hu, L.s. Li, W. Yang, Liberato Manna, Lin-wang Wang, A. Paul Alivisatos: Science 292, 2060 (2001)10.1126/science.1060810 ↗
6. M. Saito, M. Miyagi: Appl. Opt. 28, 3529 (1989)10.1364/AO.28.003529 ↗
7. M. Saito, M. Kirihara, T. Taniguchi, M. Miyagi: Appl. Phys. Lett. 55, 607 (1989)10.1063/1.101572 ↗
8. Y.T. Pang, G.W. Meng, L.D. Zhang, Y. Qin, X.Y. Gao, A.W. Zhao: Adv. Mater. 12, 719 (2002)
9. Y.T. Pang, G.W. Meng, Y. Zhang, Q. Fang, L.D. Zhang: Appl. Phys. A 76, 533 (2003)10.1007/s00339-002-1483-8 ↗
10. T. Ikari, H. Berger, F. Levy: Mater. Res. Bull. 21, 99 (1986)10.1016/0025-5408(86)90035-8 ↗
11. K. Araki, T. Tanaka: Jpn. J. Appl. Phys. 11, 472 (1972)10.1143/JJAP.11.472 ↗
12. C.A. Huber, T.E. Huber, M. Sadoqi, J.A. Lubin, S. Manalis, C.B. Prater: Science 263, 800 (1994)10.1126/science.263.5148.800 ↗
13. B. Mayers, Y. Xia: J. Mater. Chem. 12, 1875 (2002)10.1039/b201058e ↗
14. M. Mo, J. Zeng, X. Liu, W. Yu, S. Zhang, Y. Qian: Adv. Mater. 14, 1658 (2002)10.1002/1521-4095(20021118)14:22<1658::AID-ADMA1658>3.0.CO;2-2 ↗
15. Y. Du, W.L. Cai, C.M. Mo, J. Chen, L.D. Zhang, X.G. Zhu: Appl. Phys. Lett. 74, 2951 (1999)10.1063/1.123976 ↗
16. C. Lepiller, P. Cowache, J.F. Guillemoes, N. Gibson, E. Özsan, D. Lincot: Thin Solid Films 361–362 118 (2000)10.1016/S0040-6090(99)00859-7 ↗
17. E. Morri, C.K. Backer, J.K. Keynolds, K.W. Raicsh: Electroanal. Chem. 252, 441 (1988)10.1016/0022-0728(88)80228-6 ↗
18. W.H.A. Fincham, M.H. Freeman: Optics, 9th (Butterworth Inc., Boston 1980)
19. R.A. Smith: Semiconductors (Cambridge University press: Cambridge 1961)