Wavelength dependence of laser-induced excitation dynamics in silicon
Source abstract
Abstract
Abstract Effect of laser wavelength on the carrier-phonon dynamics and damage threshold of silicon is studied numerically. Laser excitation dynamics in silicon is studied using Three-Temperature Model (3TM). We consider the evolution of electron, hole, and lattice temperatures separately and including band-gap re-normalization effect on optical properties of silicon. Finite Difference Time Domain method is used to model the laser field. Damage threshold calculated using the 3TM is in reasonable agreement with the experiments. Our results indicate that the competition of inter-band excitation, plasma heating, and electron–phonon relaxation process defines the damage threshold for various wavelengths and pulse durations.
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Research context
OpenAlex topics: Laser Material Processing Techniques · Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence
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References (41)
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