Discussion on the electrical and thermoelectrical properties of amorphous In–Sb–Te Films
Source abstract
Abstract
Different compositions of (In0.5Sb0.5)1−x Te x (0.50 ≤ x ≤ 0.65) thin films were prepared by thermal evaporated technique, onto pre-cleaned glass substrates at ~298 K. Both dark electrical resistivity (ρ) and thermoelectric power (S) were measured in the temperature range 300–420 K. The concentration of the free carriers is obtained from DC conductivity and thermoelectric power measurements. Seebeck coefficient was found to be positive over entire temperature range, indicating that (In0.5Sb0.5)1−x Te x films are p-type semiconducting materials. Also, the variation of the mobility with temperature has been estimated. Increasing tellurium concentration is found to affect the DC conductivity and thermoelectric power of the studied films. The activation energies obtained from the DC conductivity and thermoelectric power increase with increasing tellurium content. The obtained results were interpreted according to the chemical bond approach.
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Advanced Thermoelectric Materials and Devices
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References (42)
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