Effect of RF power of Al2O3 target on the physical properties of aluminum-doped zinc oxide films
Source abstract
Abstract
In this report, we investigate the optical and electrical properties of aluminum zinc oxide (AZO) thin films using magnetron sputtering method in preparing the thin films and spectrophotometer to measure the optical characteristics. The X-ray diffraction (XRD) patterns of the films are found to have amorphous structure. The optical band gap Eg, refractive index n, electronic $${\alpha }_{\mathrm{Ep}}$$ polarizability, carrier concentration Nc, plasma frequency $${\omega }_{\mathrm{p}}$$ , electrical resistivity $${\rho }_{\mathrm{s}}$$ , and sheet resistance $${R}_{\mathrm{sh}}$$ are found to decrease with increasing the RF power of Al2O3 target. The refractive index shows a normal dispersion. Urbach energy Eu and figure of merit are found to increase with increasing the RF power of Al2O3 target. Our results manifest that the change of the RF power of the Al2O3 target can improve the AZO thin films, which is appropriate for solar sell applications.
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Research context
OpenAlex topics: ZnO doping and properties · Chalcogenide Semiconductor Thin Films · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (37)
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