Ion-beam-induced ferromagnetism in Mn-doped PrFeO3 thin films grown on Si (100)
Source abstract
Abstract
The present study shows that the ion beam irradiation induces room-temperature ferromagnetic ordering in pulsed laser-deposited Mn-doped PrFeO3 thin films on Si (100) apart from change in the morphological, structural and electrical properties. Dense electronic excitation produced by high-energy 120 MeV Ag9+ ion irradiation causes change in surface roughness, crystallinity and strain. It is also evident that these excitations induce the magnetic ordering in this system. The observed modifications are due to the large electronic energy deposited by swift heavy ions irradiation. The appearance of ferromagnetism at 300 K in these samples after irradiation may be attributed to the canting of the antiferromagnetically ordered spins due to the structural distortion.
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Research context
OpenAlex topics: Multiferroics and related materials · Magnetic and transport properties of perovskites and related materials · Electronic and Structural Properties of Oxides
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References (32)
Show source-provided references
1. G.A. Samara, J. Phys.: Condens. Matter 15, 367 (2003)
2. K. Sultan, A.J. Zubida Habib, S.A. Mir, M. Ikram, K. Asokan, Adv. Mater. Lett. 5(1), 9–13 (2014)10.5185/amlett.2013.6496 ↗
3. M. Marezio, J.P. Remeiko, P.D. Dernier, Acta Crystallogr. B 269, 2008 (1970)10.1107/S0567740870005319 ↗
4. M. Marezio, P.D. Dernier, Mater. Res. Bull. 6, 23 (1971)10.1016/0025-5408(71)90155-3 ↗
5. K. Sultan, M. Ikram, K. Asokan, Vacuum 99, 251–258 (2014)10.1016/j.vacuum.2013.06.014 ↗
6. S.A. Wolf, D.D. Awschalom, R.A. Buhrman, J.M. Daughton, S. VonMolnar, M. Roukes, A.Y. Chtchelkanova, D.M. Treger, Science 294, 1488 (2001)10.1126/science.1065389 ↗
7. S.D. Sarma, Nature 2, 292 (2003)10.1038/nmat883 ↗
8. D. Kanjilal, Curr. Sci. 80, 1560 (2001)
9. R. Kumar, R.J. Choudhary, S.I. Patil, S. Husain, J.P. Srivastava, S.P. Sanyal, S.E. Lofland, J. Appl. Phys. 96, 7383 (2004)10.1063/1.1818719 ↗
10. R.J. Choudhary, R. Kumar, S. Husain, J.P. Srivastava, S.I. Patil, S.K. Malik, Appl. Phys. Lett. 82, 222501 (2005)10.1063/1.1941479 ↗
11. S. Khatua, P.K. Mishra, R. Kumar, D.C. Kundaliya, D. Buddhikot, R. Pinto, S.K. Malik, J. Appl. Phys. 96, 7403 (2004)10.1063/1.1812351 ↗
12. S.K. Arora, R. Kumar, R. Singh, D. Kanjilal, G.K. Mehta, R. Bathe, S.I. Patil, S.B. Ogale, J. Appl. Phys. 86, 4452 (1999)10.1063/1.371385 ↗
13. M. Toulemonde, S. Bouffard, F. Studer, Nucl. Instrum. Methods Phys. Res. B 91, 108 (1994)10.1016/0168-583X(94)96200-6 ↗
14. F.A. Mir, Phil. Mag. (2013). doi: 10.1080/14786435.2013.853139
15. K. Sultan, M. Ikram, S. Gautam, H.-K. Lee, K.H. Chae, K. Asokan, J. Alloy. Compd. 628, 151–157 (2015)10.1016/j.jallcom.2014.11.196 ↗
16. B. Lal, S.K. Khosa, R. Tickoo, K.K. Bamzai, P.N. Kotru, Dielectric characteristics of melt grown doped KMgF3 crystals. Mater. Chem. Phys. 83, 158–168 (2004)10.1016/j.matchemphys.2003.09.011 ↗
17. D. Ravinder, K.V. Kumar, Dielectric behaviour of erbium substituted Mn–Zn ferrites. Bull. Mater. Sci. 24, 505–509 (2001)10.1007/BF02706722 ↗
18. M. Lang, J. Lian, J. Zhang, F.X. Zhang, W.J. Weber, C. Trautmann, R. Neumann, R.C. Ewing, Phys. Rev. B 79, 224105 (2009)10.1103/PhysRevB.79.224105 ↗
19. M. Lang, F.X. Zhang, J. Lian, C. Trautmann, Z. Wang, R.C. Ewing, J. Mater. Res. 24, 1322 (2009)10.1557/jmr.2009.0151 ↗
20. W.J. Weber, Nucl. Instrum. Methods Phys. Res. B 166, 98 (2000)10.1016/S0168-583X(99)00643-6 ↗
21. K. Trachenko, M. Pruneda, E. Artacho, M.T. Dove, Phys. Rev. B 70, 134112 (2004)10.1103/PhysRevB.70.134112 ↗
22. S.B. Ogale, Y.H. Li, M. Rajeswari, L. Salamanca Riba, R. Ramesh, T. Venkatesan, A.J. Millis, R. Kumar, G.K. Mehta, R. Bathe, S.I. Patil, J. Appl. Phys. 87, 4210 (2000)10.1063/1.373054 ↗
23. S. Nakashima, K. Fujita, A. Nakao, K. Tanaka, Y. Shimotsuma, K. Miura, K. Hirao, Appl. Phys. A 94, 83–88 (2009)10.1007/s00339-008-4940-1 ↗
24. N. Okasha, J. Alloy. Compd. 490, 307–310 (2010)10.1016/j.jallcom.2009.10.001 ↗
25. Y. Sundarayya, P. Mandal, A. Sundaresan, C.N. Rao, J. Phys.: Condens. Matter 23, 436001 (2011)
26. P. Mandal, V.S. Bhadram, Y. Sundarayya, C. Narayana, A. Sundaresan, C.N. Rao, Phys. Rev. Lett. 107, 137202 (2011)10.1103/PhysRevLett.107.137202 ↗
27. R.L. Fleischer, P.B. Price, R.M. Walker, Nuclear Tracks in Solids, Principles and Applications (H. Bennett, University of California Press, Oakland, 1975)10.1525/9780520320239 ↗
28. B.I. Shklovskii, A.L. Efros, Electronic Properties of Doped Semiconductors (Springer, Berlin, 1954)
29. K.A. Krezhov, P.S. Jajdzhiev, A.M. Kadomtseva, I.B. Krinettskii, M.M. Lukina, J. Phys. C: Solid State Phys. 15, 6437 (1982)10.1088/0022-3719/15/31/019 ↗
30. Y. Qin, X.Q. Liu, X.M. Chen, J. Appl. Phys. 113, 44113 (2013)10.1063/1.4789605 ↗
31. M. Wasi Khan, M.A. Majeed Khan, M. Alhoshan, M.S. Alsalhi, A.S. Aldwayyan, R. Kumar, S. Husain, J. Appl. Phys. 107, 093704 (2010)10.1063/1.3400036 ↗
32. K. Usha Chandra, V.G. Asokan, Adv. Mater. Lett. 4, 862 (2013)10.5185/amlett.2013.4455 ↗