Role of surface fixed charge in the surface passivation of thermal atomic layer deposited Al2O3 on crystalline-Si
Source abstract
Abstract
In this work, surface passivation of thermal atomic layer deposited (ALD) Al2O3 films on Si has been investigated. A quantitative analysis shows that field-effect passivation based on surface fixed charge combined with chemical passivation is assumed to contribute to the passivation performance and that a low defect density is critical to passivation quality. The surface fixed negative charge, which is exponentially modulated from ∼0 cm−2 to −2×1012 cm−2 by annealing, is proposed to have arisen from the reconstruction of the interfacial SiOx layer.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and devices · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (21)
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