Bipolar resistive switching in Mn-doped BiFeO3 thin films synthesized via sol–gel-assisted spin coating technique
Source abstract
Abstract
The resistive switching behavior of pure and Mn-doped BiFeO3 thin films deposited on glass substrates, which exhibits reliable bipolar switching, has been compared in the study presented here. The Ron/Roff ratio is found to be one order of magnitude higher in Mn-doped BiFeO3 than in pure BiFeO3, and the RESET voltage is significantly lower. The device`s current–voltage curves have been theoretically fitted, and they show filamentary conduction in Cu/Mn:BiFeO3/Cu. As opposed to the Cu/BiFeO3/Cu device, the atomically doped Mn, on the other hand, controls the migration of oxygen vacancies and was found to dominate RESET voltage in this device as the low resistance state relaxes to the high resistance state at a lower voltage. Our findings imply that the resistive switching mechanism is probably controlled by magnetic impurity doping. Our results imply that magnetic impurity doping regulates the resistive switching mechanism, most likely by affecting the oxygen vacancy migration dynamics.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Multiferroics and related materials · Ferroelectric and Piezoelectric Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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