Fabrication of GaInPSb quaternary alloy nanowires and its room temperature electrical properties
Source abstract
Abstract
GaInPSb quaternary alloy nanowires were first synthesized via a simple chemical vapor deposition method. The synthesized nanowires’ length can reach up to 20 μm and diameter ranging from 50 to 100 nm. Raman measurements and high-resolution transmission electron microscopy image illustrate that the as-grown nanowires have a high crystallinity. Room temperature near-infrared photodetector based on as-prepared GaInPSb nanowires was also built for the first time. It shows a good contact with the electrode, and the device has a strong light response to light illumination. This novel near-infrared photodetector may find promising applications in integrated infrared photodetection, information communication, and processing.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Nanowire Synthesis and Applications · GaN-based semiconductor devices and materials · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (31)
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