The continuous and persistent periodical growth induced by substrate accommodation in In2O3 nanostructure chains and their photoluminescence properties
Source abstract
Abstract
The growth of pyramidal and triangular beaded In2O3 nanocrystal chains by using oxygen-assisted thermal evaporation, substrate accommodation and condensation method has been articulated. Self-assembled In2O3 nanocrystal chains have been synthesized by the vapor–solid (VS) and vapor–liquid–solid (VLS) growth mechanism and also through controlling the kinetics factors (saturation ratio). A periodical one-dimensional (1-D) and persistent (0-D) growth was proposed to explain the formation of lateral nanostructures, and this formation aspect was ascribed to the alternate 1-D and 0-D growth. Preparing the needed growth factor, the In2O3 nanocrystal chains extended to several micrometers. The growth mechanism analysis was useful to realize the relation between the kinetics factors and the complex nanostructure. The morphology and size of nanocrystals intensively were changed by oxygen concentration and led to interesting photoluminescence property.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Gas Sensing Nanomaterials and Sensors · ZnO doping and properties · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (37)
Show source-provided references
1. C.G. Granqvist, Appl. Phys A Solids. Surf 57, 19 (1993)10.1007/BF00331211 ↗
2. I. Hamberg, C.G. Granqvist, J. Appl. Phys. 60, R123 (1986)10.1063/1.337534 ↗
3. A. Gurlo, N. Barsan, U. Weimar, M. Ivanovskaya, A. Taurino, P. Siciliano, Chem. Mater. 15, 4377 (2003)10.1021/cm031114n ↗
4. V. Marotta, S. Orlando, G.P. Parisi, A. Giardini, Appl. Surf. Sci. 154, 640 (2000)10.1016/S0169-4332(99)00402-X ↗
5. C. Li, D.H. Zhang, X.L. Liu, S. Han, T. Tang, J. Han, C. Zhou, Appl. Phys. Lett. 82, 1613 (2003)10.1063/1.1559438 ↗
6. Y. Shigesato, S. Takaki, T.J. Haranoh, Appl. Phys. 71, 3356 (1992)10.1063/1.350931 ↗
7. B. Lei, C. Li, D.H. Zhang, Q.F. Zhou, K.K. Shung, C. Zhou, Appl. Phys. Lett. 84, 4553 (2004)10.1063/1.1759069 ↗
8. M.J. Zheng, L.D. Zhang, G.H. Li, X.Y. Zhang, X.F. Wang, Appl. Phys. Lett. 79, 839 (2001)10.1063/1.1389071 ↗
9. X.S. Peng, G.W. Meng, J. Zhang, X.F. Wang, Y.W. Wang, C.Z. Wang, L.D. Zhang, J. Mater. Chem. 12, 1602 (2002)10.1039/b111315a ↗
10. C.H. Liang, G.W. Meng, Y. Lei, F. Phillipp, L.D. Zhang, Adv. Mater. 13, 1330 (2001)10.1002/1521-4095(200109)13:17<1330::AID-ADMA1330>3.0.CO;2-6 ↗
11. C. Li, D.H. Zhang, S. Han, X.L. Liu, T. Tang, C.W. Zhou, Adv. Mater. 15, 143 (2003)10.1002/adma.200390029 ↗
12. J.Y. Lao, J.Y. Huang, D.Z. Wang, Z.F. Ren, Adv. Mater. 16, 65 (2004)10.1002/adma.200305684 ↗
13. C.L. Hsin, J.H. He, L.J. Chen, Appl. Surf. Sci. 244, 101 (2005)10.1016/j.apsusc.2004.11.056 ↗
14. Y.G. Yan, Y. Zhang, H.B. Zeng, L.D. Zhang, Cryst. Growth Des. 7, 940 (2007)10.1021/cg0607194 ↗
15. C. Li, D. Zhang, S. Han, X. Liu, T. Tang, B. Lei, Z. Liu, C. Zhou, Ann. N.Y. Acad. Sci. 1006, 104 (2003)10.1196/annals.1292.007 ↗
16. P. Nguyen, H.T. Ng, T. Yamada, M.K. Smith, J. Li, J. Han, M. Meyyappan, Nano Lett. 4, 651 (2004)10.1021/nl0498536 ↗
17. D.H. Zhang, Z.Q. Liu, C. Li, T. Tang, X.L. Liu, S. Han, B. Lei, C.W. Zhou, Nano Lett. 4, 1919 (2004)10.1021/nl0489283 ↗
18. D.H. Zhang, C. Li, X.L. Liu, S. Han, T. Tang, C.W. Zhou, Appl. Phys. Lett. 83, 1845 (2003)10.1063/1.1604194 ↗
19. K. Soulantica, L. Erades, M. Sauvan, F. Senocq, A. Maisonnat, B. Chaudret, Adv. Funct. Mater. 13, 553 (2003)10.1002/adfm.200304291 ↗
20. H.Y. Peng, N. Wang, X.T. Zhou, Y.F. Zheng, C.S. Lee, S.T. Lee, Chem. Phys. Lett. 359, 241 (2002)10.1016/S0009-2614(02)00644-9 ↗
21. A.P. Levitt (ed.), Whisker Technology (Wiley-Interscience, New York, 1970)
22. P. Yang, C.M. Lieber, J. Mater. Res. 12, 2981 (1997)10.1557/JMR.1997.0393 ↗
23. R.S. Wagner, W.C. Ellis, Appl. Phys. Lett. 4, 89 (1964)10.1063/1.1753975 ↗
24. H. Kohno, S. Takeda, Appl. Phys. Lett. 73, 3144 (1998)10.1063/1.122700 ↗
25. Y.G. Yan, Y. Zhang, G.W. Meng, J. Cryst. Growth 294, 184 (2006)10.1016/j.jcrysgro.2006.06.049 ↗
26. Y. Zhang, Y.G. Yan, F. Zhu, Nanoscale Res. Lett. 2, 492 (2007)10.1007/s11671-007-9094-0 ↗
27. Y.F. Hao, G.W. Meng, C.H. Ye, L.D. Zhang, Cryst. Growth Des. 5, 1617 (2005)10.1021/cg050103z ↗
28. G. Shen, B. Liang, X. Wang, H. Huang, D. Chen, Z.L. Wang, ACS Nano 5, 6148 (2011)10.1021/nn2014722 ↗
29. M. Shariati, V. Ghafouri, Eur. Phys. J. Appl. Phys. 65, 20404 (2014)10.1051/epjap/2014130374 ↗
30. M. Shariati, V. Ghafouri, Int. J. Mod. Physics B 28, 1450101 (2014)10.1142/S021797921450101X ↗
31. N. Singh, T. Zhang, P.S. Lee, Nanotechnology 20, 195605 (2009)10.1088/0957-4484/20/19/195605 ↗
32. J.G. Wen, J.Y. Lao, D.Z. Wang, T.M. Kyaw, Y.L. Foo, Z.F. Ren, Chem. Phys. Lett. 372, 717 (2003)10.1016/S0009-2614(03)00485-8 ↗
33. Y. Zhang, H.B. Jia, D.P. Yu, X.H. Luo, Z.S. Zhang, X.H. Chen, J. Mater. Res. 18, 2793 (2003)10.1557/JMR.2003.0389 ↗
34. Z.L. Wang, J. Phys. Chem. B 104, 1153 (2000)10.1021/jp993593c ↗
35. K. Sladek, F. Haas, M. Heidelmann, D. Park, J. Barthel, F. Dorn, T.E. Weirich, D. Grutzmacher, H. Hardtdegen, J. Crystal Growth 370, 141 (2013)10.1016/j.jcrysgro.2012.09.059 ↗
36. C.L. Hsin, J.H. He, C.Y. Lee, W.W. Wu, P.H. Yeh, L.J. Chen, Z.L. Wang, Nano Lett. 7, 1799 (2007)10.1021/nl0707914 ↗
37. T.Y. Zhang, Y.J. Su, Appl. Phys. Lett. 74, 1689 (1999)10.1063/1.123656 ↗