Numerical analysis on the effects of multi-quantum last barriers in AlGaN-based ultraviolet light-emitting diodes
Source abstract
Abstract
The advantages of AlGaN-based ultraviolet light-emitting diode with AlGaN/AlGaN multi-quantum last barrier (MQLB) are investigated numerically in this work. The light output power, internal quantum efficiency, energy band diagrams, carrier concentrations, radiative recombination rate, and spontaneous emission spectra in the multi-quantum wells are investigated. The simulation results show that the structure with MQLB exhibits higher output power and smaller efficiency droop at high current as compared to the conventional one. Based on the numerical simulation and analysis, these improvements on the device characteristics are attributed to the remarkable improvement of the hole injection efficiency from p-type region, which results from the lower effective barrier height for hole transportation, the lower consumption of holes in the p-side, and the very low hole population in MQLB region.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Photocathodes and Microchannel Plates
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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