Improving the organic/Si heterojunction hybrid solar cell property by optimizing PEDOT:PSS film and with amorphous silicon as back surface field
Source abstract
Abstract
Organic/Si hybrid heterojunction hybrid solar cells have got a great progress. The hybrid device may be promising in terms of reducing cost due to its simple technological process. It is crucial for high efficiency solar cells to form better coating films on the Si substrate. Here, the performance of organic/Si heterojunction hybrid solar cells is obviously enhanced by adding surfactant (FS300) into poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) film and the device with amorphous silicon as back surface field is successfully fabricated. The proper amount of surfactant addition improves the uniformity and homogeneous of the polymer film that can be reflected by scanning electron microscope and atomic force microscope, which allows good contact on the texture-Si substrate resulting in excellent device property. Also, the power conversion efficiency of cells is boosted to 9.37 from 7.31% displayed a 28% enhancement by embedding amorphous silicon thin film layer at rear interface as holes blocking layer. The insertion layer of amorphous silicon enhances the extraction of photon-generated carrier and suppresses the recombination of hole–electron at the rear cathode. Which results all improvement in the short-circuit current density, the open-circuit voltage and the fill factor. By optimizing the polymer film property and inserting the hole blocking layer, the performance of hybrid Si/organic hybrid solar cells is greatly improved.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Nanowire Synthesis and Applications · Semiconductor materials and interfaces · Silicon and Solar Cell Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (25)
Show source-provided references
1. T.G. Chen, B.Y. Huang, E.C. Chen, P. Yu, H.F. Meng, Appl. Phys. Lett. 101(3), 033301 (2012)10.1063/1.4734240 ↗
2. C.A. Wolden, J. Kurtin, J.B. Baxter, I. Repins, S.E. Shaheen, J.T. Torvik, A.A. Rockett, V.M. Fthenakis, E.S. Aydil, J. Vac. Sci. Technol. A 29(3), 030801 (2011)10.1116/1.3569757 ↗
3. A. Wang, J. Zhao, M.A. Green, Appl. Phys. Lett. 57(6), 602 (1990)10.1063/1.103610 ↗
4. A. Wang, J. Zhao, M.A. Green, Prog. Photovolt. Res. Appl. 7(6), 471 (1999)10.1002/(SICI)1099-159X(199911/12)7:6<471::AID-PIP298>3.0.CO;2-7 ↗
5. R.F. Service, Science (New York, NY) 319(5864), 718 (2008)10.1126/science.319.5864.718 ↗
6. S. Avasthi, S. Lee, Y.L. Loo, J.C. Sturm, Adv. Mater. 23(48), 5762 (2011)10.1002/adma.201102712 ↗
7. L. He, C. Jiang, D. Rusli, H.Wang Lai, Appl. Phys. Lett. 99(2), 021104 (2011)10.1063/1.3610461 ↗
8. X. Shen, B. Sun, D. Liu, S.T. Lee, J. Am. Chem. Soc. 133(48), 19408 (2011)10.1021/ja205703c ↗
9. D. Alemu, H.Y. Wei, K.C. Ho, C.W. Chu, Energy Environ. Sci. 5(11), 9662–9671 (2012)10.1039/c2ee22595f ↗
10. R. Lu, L. Xu, Z. Ge, R. Li, J. Xu, L. Yu, K. Chen, Nanoscale Res. Lett. 11(1), 1 (2016)10.1186/s11671-015-1209-4 ↗
11. M. Yameen, S.K. Srivastava, P. Singh, K. Turan, P. Prathap, C.M.S. Vandana, P.K.S. Rauthan, J. Mater. Sci. 50(24), 8046 (2015)10.1007/s10853-015-9372-7 ↗
12. J. Schmidt, V. Titova, D. Zielke, Appl. Phys. Lett. 103(18), 1 (2013)10.1063/1.4827303 ↗
13. I. Khatri, Z. Tang, Q. Liu, R. Ishikawa, K. Ueno, H. Shirai, Appl. Phys. Lett. 102(6), 063508 (2013)10.1063/1.4792691 ↗
14. M. Pietsch, S. Jackle, S. Christiansen, Appl. Phys. A 115(4), 1109 (2014)10.1007/s00339-014-8405-4 ↗
15. R. Liu, S. Lee, B. Sun, Adv. Mater. 26(34), 6007 (2014)10.1002/adma.201402076 ↗
16. Y. Zhang, F. Zu, S.T. Lee, L. Liao, N. Zhao, B. Sun, Adv. Energy Mater. 4(2), 1300923 (2014)10.1002/aenm.201300923 ↗
17. F. Zhang, B. Sun, T. Song, X. Zhu, S. Lee, Chem. Mater. 23(8), 2084 (2011)10.1021/cm103221a ↗
18. L. He, C. Jiang, H. Wang, D. Lai, Rusli, Appl. Phys. Lett. 100(7), 073503 (2012)10.1063/1.3684872 ↗
19. W.R. Wei, M.L. Tsai, S.T. Ho, S.H. Tai, C.R. Ho, S.H. Tsai, C.W. Liu, R.J. Chung, J.H. He, Nano Lett. 13(8), 3658 (2013)10.1021/nl401540h ↗
20. P. Yu, C.Y. Tsai, J.K. Chang, C.C. Lai, P.H. Chen, Y.C. Lai, P.T. Tsai, M.C. Li, H.T. Pan, Y.Y. Huang, C.L. Wu, Y.L. Chueh, S.W. Chen, C.H. Du, S.F. Horng, H.F. Meng, ACS Nano 7(12), 10780 (2013)10.1021/nn403982b ↗
21. S. Thiyagu, C.C. Hsueh, C.T. Liu, H.J. Syu, T.C. Lin, C.F. Lin, Nanoscale 6(6), 3361 (2014)10.1039/c3nr06323b ↗
22. D. Zielke, A. Pazidis, F. Werner, J. Schmidt, Sol. Energy Mater. Sol. Cells 131, 110 (2014)10.1016/j.solmat.2014.05.022 ↗
23. S.M. Sze, Physics of Semiconductor Devices (Wiley-Interscience, New York, 1970), p. 336
24. J. Zhang, S. Lee, B. Sun, Electrochim. Acta 146, 845 (2014)10.1016/j.electacta.2014.08.065 ↗
25. M.A. Green, Solid-State Electron. 24(8), 788 (1981)10.1016/0038-1101(81)90062-9 ↗