Carrier transport and photoresponse for heterojunction diodes based on the reduced graphene oxide-based TiO2 composite and p-type Si
Source abstract
Abstract
The present work reports the fabrication and detailed electrical properties of heterojunction diodes based on p-type Si and the reduced graphene oxide-based TiO2 (TiO2:RGO) composite. The enhanced dark conductivity was observed for TiO2:RGO composite films. The improved electrical conductivity is considered to mainly come from the mobility enhancement. The TiO2/p-type Si diode shows a poor rectifying behavior and low photoresponse. This is because of the dominance of electron traps in TiO2. However, the TiO2:RGO/p-type Si diode shows a good rectifying behavior and high photoresponse, which is attributed to high-mobility electron transport combined with the reduced number of electron traps.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Graphene research and applications · Semiconductor materials and devices · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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