journal article·2005-07

Effect of composition gradient on CuIn3Te5 single-crystal properties and micro-Raman and infrared spectroscopies

R. Díaz, L. Bisson, F. Agulló-Rueda, M. Abd Lefdil, F. Rueda

Applied Physics A· Volume 81· Issue 2
Publisher page

Abstract

Several CuIn3Te5 single-crystal samples grown by the vertical Bridgman method have been studied. Changes in composition of the In/Cu atomic ratios in the 3.45–1.88 range have been detected along the ingots by X-ray energy-dispersive analysis. In the first-to-freeze region, Cu excess and In and Te depletions appear. From X-ray powder diffraction data we conclude that the crystals show the P-chalcopyrite-type structure, space group P42c, with lattice parameters a=6.1713A and c=12.329A, similar to that found in CuIn3Se5. The optical energy gaps, as determined by spectral ellipsometry, lie in the 1.83–1.93 eV range and change with composition. Micro-Raman spectra and infrared reflectance measurements confirm the presence of the crystallographic phase CuIn3Te5 and indicate a highly ordered Te sublattice and disordered Cu and In sublattices. Conduction types n and p are found, suggesting the possibility of intentional doping. The crystal density and gaps seem appropriate for their use in gamma-ray detectors.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (27)

Show source-provided references
1. J.S. Ward, K. Ramanathan, F.S. Hasoon, T.J. Coutts, J. Keane, M.A. Contreras, T. Moriarty, R. Noufi: Prog. Photovolt. Res. Appl. 10, 41 (2002)10.1002/pip.424 ↗
2. I.M. Kotschau, H.W. Schock: J. Phys. Chem. Solids 64, 1559 (2003)10.1016/S0022-3697(03)00074-X ↗
3. H.P. Wang, W.W. Lam, I. Shih: J. Cryst. Growth 200, 137 (1999)10.1016/S0022-0248(98)01300-1 ↗
4. J.L. Martín de Vidales, H. Charbonnier, R. Díaz, J.M. Merino, F. Rueda, M. León: Jpn. J. Appl. Phys. 39, 336 (2000)10.7567/JJAPS.39S1.336 ↗
5. J.M. Merino, M. Di Michiel, M. León: J. Phys. Chem. Solids 64, 1649 (2003)10.1016/S0022-3697(03)00114-8 ↗
6. G. Marín, J.M. Delgado, S.M. Wasim, C. Rincón, G. Sánchez Pérez, A.E. Mora, P. Bocaranda, J.A. Henao: J. Appl. Phys. 87, 7814 (2000)10.1063/1.373460 ↗
7. S.M. Wasim, C. Rincón, G. Marín, R. Marquez: J. Phys. Chem. Solids 64, 1627 (2003)10.1016/S0022-3697(03)00099-4 ↗
8. T. Takahashi, S. Watanabe: IEEE Trans. Nucl. Sci. 48(4), 950 (2001)10.1109/23.958705 ↗
9. Z.A. Shukri, C.H. Champness, I. Shih: J. Cryst. Growth 129, 107 (1993)10.1016/0022-0248(93)90439-4 ↗
10. J.M. Merino, J.L. Martín de Vidales, S. Mahanty, R. Díaz, F. Rueda, M. León: J. Appl. Phys. 80, 5610 (1996)10.1063/1.363611 ↗
11. R. Diaz, M. León, F. Rueda: J. Vac. Sci. Technol. A 10, 295 (1992)10.1116/1.578079 ↗
12. R. Díaz, J.M. Merino, T. Martín, F. Rueda, M. León: J. Appl. Phys. 83, 1 (1998)10.1063/1.366650 ↗
13. A. Congiu, L. Garbato, P. Manca: Mater. Res. Bull. 8, 293 (1973)10.1016/0025-5408(73)90007-X ↗
14. U.C. Boehenke, G. Kuhn: J. Mater. Sci. 22, 1635 (1987)10.1007/BF01132385 ↗
15. W.G. Pfann: Trans. Am. Inst. Min. Metall. Eng. 194, 747 (1952)
16. H.P. Wang, I. Shih, C.H. Champness: Thin Solid Films 494, 361 (2000)
17. M. León, J.M. Merino, J.L. Martín de Vidales: J. Vac. Sci. Technol. A 11, 2430 (1993)10.1116/1.578588 ↗
18. J.M. Merino, S. Mahanty, M. León, R. Díaz, F. Rueda, J.L. Martín de Vidales: Thin Solid Films 70, 361 (2000)
19. W. Hönle, G. Kühn, U.C. Boehnke: Cryst. Res. Technol. 23, 1347 (1988)10.1002/crat.2170231027 ↗
20. J.M. Merino, J.L. Martín de Vidales, S. Mahanty, R. Díaz, F. Rueda, M. León: J. Appl. Phys. 80, 5610 (1996)10.1063/1.363611 ↗
21. R. Díaz, T. Martín, J.M. Merino, M. León, J.L. Martín de Vidales, F. Rueda: J. Appl. Phys. 88, 1776 (2000)10.1063/1.1303063 ↗
22. R. Díaz, T. Martín, J.M. Merino, M. León, F. Rueda: J. Vac. Sci. Technol. A 18, 2957 (2000)10.1116/1.1314391 ↗
23. S. Nomura, S. Ouchi, S. Endo: Jpn. J. Appl. Phys. 36, L1075 (1997)10.1143/JJAP.36.L1075 ↗
24. C. Rincón, S.M. Wasim, G. Marín: Appl. Phys. Lett. 73, 441 (1998)10.1063/1.121893 ↗
25. C. Rincón, S.M. Wasim, G. Marín, E. Hernandez, J.M. Delgado, J. Galibert: J. Appl. Phys. 88, 3439 (2000)10.1063/1.1289225 ↗
26. C. Rincón, S.M. Wasim, G. Marín: J. Appl. Phys. 85, 3925 (1999)10.1063/1.369767 ↗
27. G.D. Holah, A.A. Schenk, S. Perkowitz: Phys. Rev. B 23, 6288 (1981)10.1103/PhysRevB.23.6288 ↗