Electrical properties of boron-doped diamond-like carbon thin films deposited by femtosecond pulsed laser ablation
Source abstract
Abstract
We report on electrical measurements and structural characterization performed on boron-doped diamond-like carbon thin films deposited by femtosecond pulsed laser deposition. The resistance has been measured between 77 and 300 K using four probe technique on platinum contacts for different boron doping. Different behaviours of the resistance versus temperature have been evidenced between pure DLC and boron-doped DLC. The a-C:B thin film resistances exhibit Mott variable range hopping signature with temperature. Potential applications of DLC thin films to highly sensitive resistive thermometry is going to be discussed.
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Research context
OpenAlex topics: Diamond and Carbon-based Materials Research · Semiconductor materials and devices · Ion-surface interactions and analysis
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