Characterization of epitaxial lanthanum lutetium oxide thin films prepared by pulsed-laser deposition
Source abstract
Abstract
Epitaxial thin films of LaLuO3 were deposited on SrTiO3(100) and SrRuO3/SrTiO3(100) or SrRuO3/LaAlO3(100) substrates using pulsed-laser deposition. They were investigated by means of Rutherford backscattering spectrometry, X-ray diffraction, transmission electron microscopy and atomic force microscopy. Smooth, c-axis oriented films with a channeling minimum yield of 3% were obtained. The electrical characterization of Au/LaLuO3/SrRuO3/SrTiO3(100) and Au/LaLuO3/SrRuO3/LaAlO3(100) metal–insulator–metal capacitor stacks revealed a dielectric constant of κ>45 and a breakdown field of 2 MV/cm for 100 nm thick epitaxial LaLuO3 films.
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Research context
OpenAlex topics: Semiconductor materials and devices · Electronic and Structural Properties of Oxides · Ferroelectric and Piezoelectric Materials
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References (10)
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