Improving solar grade silicon by controlling extended defect generation and foreign atom defect interactions
Source abstract
Abstract
Multicrystalline silicon has a high commercial potential for solar cell applications. Extended lattice defects, such as dislocations and grain boundaries, are important as recombination and storage centers for metallic impurities. Their control is essential to obtain high efficiencies of the solar cell. Important parameters for the assessment of the final efficiency of the solar cells are the distribution and structure of the defects and their impact on the lifetime of minority carriers. The current understanding of the nucleation mechanisms of the most important defects during crystal growth will be described. Interaction processes between mobile impurities and extended defects are important for the recombination activity. Measurements of the recombination behavior and the contamination level will be presented. Finally, the ramifications on the solar cell efficiency shall be discussed.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Semiconductor materials and interfaces · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (53)
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