journal article·2011-09Open access

Electrical properties of an organic memristive system

Francesca Pincella, Paolo Camorani, Victor Erokhin

Applied Physics A· Volume 104· Issue 4

Abstract

We present a study on an organic resistive switching device based on the heterojunction of a thin conducting polyaniline (PANI) layer and a ions containing gel (or solution). We have studied the device, characterized by a non-linear and rectifying response to the applied voltage, as a function of some chemical and geometrical parameters such as solution pH, ions concentration and junction contact area, finding out their influence on the device electrical parameters such as the saturation current, the activation voltage, and the response time. The study leads us to develop a physical model of the device and control its response through the fabrication process predicting also interesting properties obtainable with a device miniaturization.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Advanced Memory and Neural Computing · Conducting polymers and applications · Neuroscience and Neural Engineering

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (29)

Show source-provided references
1. R. Waser, R. Dittmann, G. Staikov, K. Szot, Redox-based resistive switching memories—nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21(25–26), 2632–2663 (2009)10.1002/adma.200900375 ↗
2. J.J. Yang, M.D. Pickett, X.M. Li, D.A.A. Ohlberg, D.R. Stewart, R.S. Williams, Memristive switching mechanism for metal/oxide/metal nanodevices. Nat. Nanotechnol. 3(7), 429–433 (2008)10.1038/nnano.2008.160 ↗
3. E. Linn, R. Rosezin, C. Kugeler, R. Waser, Complementary resistive switches for passive nanocrossbar memories. Nat. Mater. 9(5), 403–406 (2010)10.1038/nmat2748 ↗
4. P.O. Vontobel, W. Robinett, P.J. Kuekes, D.R. Stewart, J. Straznicky, R.S. Williams, Writing to and reading from a nano-scale crossbar memory based on memristors. Nanotechnology 20(42) (2009)10.1088/0957-4484/20/42/425204 ↗
5. J. Borghetti, G.S. Snider, P.J. Kuekes, J.J. Yang, D.R. Stewart, R.S. Williams, ‘memristive’ switches enable ‘stateful’ logic operations via material implication. Nature 464(7290), 873–876 (2010)10.1038/nature08940 ↗
6. S.H. Jo, T. Chang, I. Ebong, B.B. Bhadviya, P. Mazumder, W. Lu, Nanoscale memristor device as synapse in neuromorphic systems. Nano Lett. 10(4), 1297–1301 (2010)10.1021/nl904092h ↗
7. H. Choi, H. Jung, J. Lee, J. Yoon, J. Park, D.J. Seong, W. Lee, M. Hasan, G.Y. Jung, H. Hwang, An electrically modifiable synapse array of resistive switching memory. Nanotechnology 20(34) (2009)10.1088/0957-4484/20/34/345201 ↗
8. Y.V. Pershin, S. La Fontaine, M. Di Ventra, Memristive model of amoeba learning. Phys. Rev. E 80(2) (2009)10.1103/PhysRevE.80.021926 ↗
9. Y. Pershin, M. di Ventra, Memory effects in complex materials and nanoscale systems. Adv. Phys. 60, 145–227 (2011)10.1080/00018732.2010.544961 ↗
10. D.H. Kwon, K.M. Kim, J.H. Jang, J.M. Jeon, M.H. Lee, G.H. Kim, X.S. Li, G.S. Park, B. Lee, S. Han, M. Kim, C.S. Hwang, Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. Nat. Nanotechnol. 5(2), 148–153 (2010)10.1038/nnano.2009.456 ↗
11. C. Nauenheim, C. Kuegeler, A. Ruediger, R. Waser, Investigation of the electroforming process in resistively switching TiO2 nanocrosspoint junctions. Appl. Phys. Lett. 96(12) (2010)10.1063/1.3367752 ↗
12. S.J. Song, K.M. Kim, G.H. Kim, M.H. Lee, J.Y. Seok, R. Jung, C.S. Hwang, Identification of the controlling parameter for the set-state resistance of a TiO2 resistive switching cell. Appl. Phys. Lett. 96(11) (2010)10.1063/1.3355415 ↗
13. T.A. Wey, S. Benderli, Amplitude modulator circuit featuring TiO2 memristor with linear dopant drift. Electron. Lett. 45(22), 1103-U8 (2009)
14. X. Cao, X.M. Li, X.D. Gao, W.D. Yu, X.J. Liu, Y.W. Zhang, L.D. Chen, X.H. Cheng, Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications. J. Appl. Phys. 106(7) (2009)10.1063/1.3236573 ↗
15. T. Driscoll, H.T. Kim, B.G. Chae, M. Di Ventra, D.N. Basov, Phase-transition driven memristive system. Appl. Phys. Lett. 95(4) (2009)10.1063/1.3187531 ↗
16. S. Moller, C. Perlov, W. Jackson, C. Taussing, S. Forrest, A polymer/semiconductor write-once read-many-times memory. Nature 426, 166–169 (2003)10.1038/nature02070 ↗
17. L. Li, Q.-D. Ling, S.-L. Lim, Y.-P. Tan, C. Zhu, D.S.H. Chan, E.-T. Kang, K.-G. Neoh, A flexible polymer memory device. Org. Electron. 8(4), 401–406 (2007)10.1016/j.orgel.2007.02.002 ↗
18. S. Choi, S.H. Hong, S.H. Cho, S. Park, S.M. Park, O. Kim, M. Ree, High-performance programmable memory devices based on hyperbranched copper phthalocyanine polymer thin films. Adv. Mater. 20, 1766–1771 (2008)10.1002/adma.200702147 ↗
19. V. Erokhin, T. Berzina, M.P. Fontana, Hybrid electronic device based on polyaniline-polyethyleneoxide junction. J. Appl. Phys. 97(6), 5 (2005)10.1063/1.1861508 ↗
20. V.I. Troitski, Methods of Deposition of Molecular Organized Thin Films (1999)
21. L. Cristofolini, M.P. Fontana, P. Camorani, T. Berzina, A. Nabok, Doping-induced conductivity transitions in molecular layers of polyaniline: Optical studies of electronic state changes. Langmuir 26(8), 5829–5835 (2010)10.1021/la9037606 ↗
22. L. Cristofolini, M.P. Fontana, O. Konovalov, T. Berzina, A. Smerieri, Doping-induced conductivity transitions in molecular layers of polyaniline: Detailed structural study. Langmuir 25, 12429–12434 (2009)10.1021/la902622x ↗
23. V. Erokhin, T. Berzina, A. Smerieri, P. Camorani, S. Erokhina, M.P. Fontana, Bio-inspired adaptive networks based on organic memristors. Nano Commun. Netw. 1, 108–117 (2010). doi: 10.1016/j.nancom.2010.05.00210.1016/j.nancom.2010.05.002 ↗
24. B. Widrow, W.H. Pierce, J.B. Angell, Birth, life, and death in microelectronic systems. IRE Trans. Mil. Electron. 1051(3), 191–201 (1961)10.1109/IRET-MIL.1961.5008348 ↗
25. A.O. Bondar, L.A. Debosha, O.M. Reznik, A.F. Stepanenkov, Simulation of the plasticity of synapses using memistors. Sov. Autom. Control 13, 47–51 (1968)
26. S. Thakoor, A. Moopenn, T. Daud, A.P. Thakoor, Solid-state thin-film memistor for electronic neural networks. J. Appl. Phys. 67, 3132–3135 (1990)10.1063/1.345390 ↗
27. E.T. Kang, K.G. Neoh, K.L. Tan, Polyaniline: A polymer with many interesting intrinsic redox states. Prog. Polym. Sci. 23(2), 277–324 (1998)10.1016/S0079-6700(97)00030-0 ↗
28. K. Ro-berg, G. Paasch, L. Dunsch, S. Ludwig, The influence of porosity and the nature of the charge storage capacitance on the impedance behavior of electropolymerized polyaniline films. J. Electroanal. Chem. 443(1), 49–62 (1998)10.1016/S0022-0728(97)00494-4 ↗
29. V. Erokhin, A. Schuz, M.P. Fontana, Organic memristor and bio-inspired information processing. Int. J. Unconv. Comput. 6(1), 15–32 (2010)