Laser backside etching of fused silica due to carbon layer ablation
Source abstract
Abstract
The backside ablation of a absorbing carbon layer onto fused silica is studied in air and water confinement in comparison. The confinement influences the etch rate and the laser fluence dependence of the etch rate significantly while the threshold fluence is almost the same. The different confinement of the laser induced plasma results in the observed rate saturation in the case of air and in a linear growing rate in the case of water confinement at medium laser fluences. The less dense air confinement permits a faster plasma expansion of the laser plume than in the case of water confinement and effects consequently the interaction time and interaction strength of the laser plume with the fused silica surface. The differences in the laser-plasma-substrate interaction cause the observed rate saturation at weak interaction (air) and the growing etch rate at strong interaction (water). Thus, the confinement situation controls the interaction process in the case of backside ablation and should be considered in indirect material processing methods such as LIBWE and LESAL, too.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Laser Material Processing Techniques · Diamond and Carbon-based Materials Research · Laser-induced spectroscopy and plasma
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (25)
Show source-provided references
1. Bäuerle D (2000) Laser Processing and Chemistry, 3. Ed. Springer, Berlin Heidelberg New York10.1007/978-3-662-04074-4 ↗
2. Ihlemann J, Wolff-Rottke B (1996) Appl. Surf. Sci. 106:28210.1016/S0169-4332(96)00422-9 ↗
3. Dyer PE, Maswadi SM, Walton CD, Ersoz M, Fletcher PDI, Paunov VN (2003) Appl. Phys. A 77:39110.1007/s00339-002-1936-0 ↗
4. Ben-Yakar A, Byer RL (2004) J. Appl. Phys. 96:531610.1063/1.1787145 ↗
5. Wang J, Niino H, Yabe A (1999) Appl. Phys. A 68:11110.1007/s003390050863 ↗
6. Böhme R, Braun A, Zimmer K (2002) Appl. Surf. Sci. 186:27610.1016/S0169-4332(01)00630-4 ↗
7. Zimmer K, Böhme R, Rauschenbach B (2004) Appl. Phys. A 79:188310.1007/s00339-004-2961-y ↗
8. Böhme R, Spemann D, Zimmer K (2004) Thin Solid Films 453:12710.1016/j.tsf.2003.11.083 ↗
9. Shin JK, Lee CS, Lee KR, Eun KY (2001) Appl. Phys. Lett. 78:63110.1063/1.1343840 ↗
10. Dupont A, Caminat P, Bournot P, Gauchon JP (1995) J. Appl. Phys. 78:202210.1063/1.360178 ↗
11. Kane DM, Halfpenny DR (2000) J. Appl. Phys. 87:454810.1063/1.373100 ↗
12. Zhao J, Sullivan J, Zayac J, Bennett TD (2004) J. Appl. Phys. 95:547510.1063/1.1703832 ↗
13. Kolomenskii AA, Lomonosov AM, Kuschnereit R, Hess P, Gusev VE (1997) Phys. Rev. Lett. 79:132510.1103/PhysRevLett.79.1325 ↗
14. Allcock G, Dyer PE, Elliner G, Snelling HV (1995) J. Appl. Phys. 78:729510.1063/1.360378 ↗
15. Haverkamp J, Mayo RM, Bourham MA, Narayan J, Jin C, Duscher G (2003) J. Appl. Phys. 93:362710.1063/1.1555695 ↗
16. Claeyssens F, Ashfold MNR, Sofoulakis E, Ristoscu CG, Anglos D, Fotakis C (2002) J. Appl. Phys. 91:616210.1063/1.1467955 ↗
17. Andreic Z, Gracin D, Aschke L, Kunze HJ (2001) Vacuum 61:38510.1016/S0042-207X(01)00149-X ↗
18. Loiseleur P, Hansen TN, Larour J, Lunney JG (2002) Appl. Surf. Sci. 197:16410.1016/S0169-4332(02)00319-7 ↗
19. Sugioka K, Wada S, Tashiro H, Toyoda K, Ohnuma Y, Nakamura A (1995) Appl. Phys. Lett. 67:278910.1063/1.114594 ↗
20. Dickinson JT (1991) Simultaneous bombardement of wide bandgap materials with UV excimer laser irradiation and KeV electrons. Springer, Berlin
21. Zhang J, Sugioka K, Midorikawa K (1998) Opt. Lett. 23:148610.1364/OL.23.001486 ↗
22. Makimura T, Mitani S, Kenmotsu Y, Murakami K, Mori M, Kondo K (2004) Appl. Phys. Lett. 85:127410.1063/1.1782265 ↗
23. Berthe L, Fabbro R, Peyre P, Tollier L, Bartnicki E (1997) J. Appl. Phys. 82:282610.1063/1.366113 ↗
24. Zhu S, Lu YF, Hong MH, Chen XY (2001) J. Appl. Phys. 89:240010.1063/1.1342200 ↗
25. Saito K, Sakka T, Ogata YH (2003) J. Appl. Phys. 94:553010.1063/1.1614431 ↗