journal article·2025-06Open access

Exploring the thermal properties of gallium sulfide (GaS) for high-temperature applications

M. Isik, G. Altuntas, N. M. Gasanly

Applied Physics A· Volume 131· Issue 6

Abstract

Abstract The thermal stability and decomposition behavior of gallium sulfide (GaS) material are critical factors in determining its suitability for high-temperature applications. This study comprehensively investigates the GaS compound using thermogravimetric analysis (TGA), differential thermal analysis (DTA), and differential scanning calorimetry (DSC) to assess its thermal stability, decomposition mechanisms, and potential applications. TGA results revealed that GaS exhibits remarkable thermal stability up to 722 °C, with a significant weight loss observed at temperatures exceeding 786 °C. The activation energy for the key decomposition process between 722 and 786 °C was calculated to be 257 kJ/mol, indicating an energy-intensive reaction involving sulfur evaporation and structural reorganization. DTA analysis highlighted a major endothermic event at 789 °C. Additionally, DSC analysis identified two thermal processes with activation energies of 117 and 53 kJ/mol, respectively. These findings demonstrate that GaS not only maintains its structural integrity at high temperatures but also possesses unique thermal properties, making it a promising candidate for high-temperature electronics, thermophotovoltaics, and sensor technologies where thermal robustness is essential.
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Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials · Optical properties and cooling technologies in crystalline materials

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