An extended dual source double-gate TFET-based optical sensor for near-infrared-sensing applications
Source abstract
Abstract
In this article, an extended dual source double-gate structure of tunnel FET is proposed to detect firmly separated spectral lines of near-infrared lights. Comparative analysis of spectral response at different wavelengths has been carried out at minimal intensity of light (0.5 W/cm2). Plot of spectral sensitivity of device is observed using the spectral response of (lambda)1 = 700 nm and (lambda)2 = 1100 nm. It has been observed that the peak spectral sensitivity of device is 2.33. Maximum optical generation rate of the device in the gate region is found to be in the order of 1021 cm−3 s−1.
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Research context
OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Nanowire Synthesis and Applications · Semiconductor materials and devices
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References (21)
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