Fast switching photodetector based on HfO2 thin film deposited using electron beam evaporation technique
Source abstract
Abstract
This study reports the electrical properties of a fast-switching photodetector based on a Hafnium Oxide (HfO2) thin film (TF) device with gold (Au) Schottky electrodes. It also presents the deposition of an HfO2 TF device using a conventional electron beam evaporation method on p-type Silicon (Si) substrates. XRD analysis confirmed the amorphous structural nature of HfO2 TF, and cross-sectional FESEM analysis shows growth of ~ 140 nm HfO2 on the p-Si substrate. Fourier transforms infrared (FTIR) analysis confirms the HfO2 bonding. Furthermore, the UV–Vis spectroscopy demonstrates that the device exhibits predominant absorption within the UV region. At room temperature, the electrical analysis of the HfO2 TF device was conducted. The device shows a good detectivity (D*) of 1.30 ( imes) 1012 Jones, a low noise equivalent power (NEP) value of 3.23 ( imes) 10–12 W, and a responsivity of 300 mA/W with an internal gain of 1.49. It was also observed that the device has a fast-switching response at + 2 V with fall and rise times of 94 ms and 93 ms, respectively, making it a suitable device for photodetector application.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and devices · Thin-Film Transistor Technologies · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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