Hydrogenic donor-related binding energy and diamagnetic susceptibility in multilayer cylindrical quantum dots under hydrostatic pressure
Source abstract
Abstract
This study employs the finite element method based on the effective-mass approximation (EMA) to numerically investigate the behavior of impurities in multilayer cylindrical quantum dots (MLCQDs). We consider the applied hydrostatic pressure (P) in our numerical analysis. The study presents numerical results for macroscopic parameters that follow the electronic properties, the binding energy (E-b), and diamagnetic susceptibility (?(dia)) of the ground state (1 s) and some excited states (1p and 2 s) of the impurity in the MLCQDs. The E-b and the ?(dia) for the three states are calculated as a function of the radius R, impurity position z0 and the hydrostatic pressure. The numerical results show that the binding energies of impurities decrease with the radius for all levels. The E-b(1s) and E-b(1p) have three maximum values that typify the number of the quantum dot layer materials contained in our system. Moreover, the diamagnetic susceptibility for the three levels is strongly affected by the hydrostatic pressure, impurity location, and radius.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · GaN-based semiconductor devices and materials · Quantum Dots Synthesis And Properties
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References (59)
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