Fast response photodetector analysis based on NiO nanowire using a catalyst-free technique

This study presents the growth of NiO nanowire (NW) on Si substrate by the Glancing angle deposition (GLAD) technique through e-beam evaporation. Field emission scanning electron microscopy (FESEM) analysis confirms the well-vertically aligned growth of the NWs. The X-ray diffraction (XRD) pattern revealed the polycrystalline nature of the sample with an average crystallite size of ~ 13.83 nm and preferred orientation at (222) directions. UV–Vis spectrum analysis showed strong absorption in the UV region with a bandgap of 3.58 eV. TRPL analysis manifest the effective charge carrier transportation and separation within the NiO NW. Further, the fabricated device with an Ag electrode shows good rectifying behaviour, giving high responsivity of 1.82 A/W, detectivity of 8.24 × 1013 Jones, and high photosensitivity of ~ 14 × 102 at -2 V under illumination. The device also prevails a rectification ratio of 9 at ± 10 V with low noise equivalent power of 5.11 × 1014. Moreover, the device also exhibits a fast response time of 130 ms (rise time) and 170 ms (fall time). A linear dynamic range value of 78.73 dB is obtained due to effective charge carrier generation and improved lifetime of the carrier. These high-performance parameters make the fabricated NiO NW-based device a good candidate for photodetector application.