Study of boron diffusion for p + emitter of large area N-type TOPCon silicon solar cells
Source abstract
Abstract
Boron doped emitters prepared by thermal diffusion using boron trichloride (BCl3) have been adopted in N-type Tunnel Oxide Passivated Contact (TOPCon) silicon solar cells. In order to establish a proper diffusion process of p + emitter that matches to TOPCon solar cells fabrication, the influence of diffusion pressure, pre-deposition O2 flow rate and drive-in O2 flow rate on the doping profiles, sheet resistance, BSG thickness as well as the sheet resistance uniformity are carefully investigated. In addition, the impact of BSG thickness on the surface morphology and optical properties of the TOPCon cells are studied. The experimental results indicate that good uniformity of p + emitter can be obtained at low pressure (300 mbar) with acceptable sheet resistance. In addition, a p + emitter with thick BSG (> 50 nm) layer is very necessary, which can effectively protect the underneath emitter during the removal process of the wrap-around poly-Si. Finally, high efficiency over 22% is obtained for 244.32 cm2 n-type TOPCon solar cells based on the boron diffused emitter with the sheet resistance 70–90 ohm/sq., BSG thickness ~ 100 nm.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (24)
Show source-provided references
1. F. Feldmann, M. Bivour, C. Reichel, et al. A passivated rear contact for high-efficiency n-type silicon solar cells enabling high VocS and FF>82%. in Presented at the 28th European PV Solar Energy Conference and Exhibition (2013)
2. Di Yan, A. Cuevas, S.P. Phang, 23% efficient p-type crystalline silicon solar cells with hole-selective passivating contacts based on physical vapor deposition of doped silicon films. Appl. Phys. Lett. 113(6), 061603 (2018)10.1063/1.5037610 ↗
3. K. Tao, Q. Li, C. Hou, Application of a-Si/μc-Si hybrid layer in tunnel oxide passivated contact n-type silicon solar cells. Sol. Energy 144, 735–739 (2017)10.1016/j.solener.2017.01.061 ↗
4. F. Feldmann, C. Reichel, R. Müller et al., The application of poly-Si/SiO x contacts as passivated top/rear contacts in Si solar cells. Sol. Energy Mater. Sol. Cells 159, 265–271 (2017)10.1016/j.solmat.2016.09.015 ↗
5. M.K. Stodolny, M. Lenes, Y. Wu et al., n-Type polysilicon passivating contact for industrial bifacial n-type solar cells. Sol. Energy Mater. Sol. Cells 158, 24–28 (2016)10.1016/j.solmat.2016.06.034 ↗
6. Y. Zhou, Ke Tao, A. Liu et al., The impacts of LPCVD wrap-around on the performance of n-type tunnel oxide passivated contact c-Si solar cell. Curr. Appl. Phys. 20(7), 911–916 (2020)10.1016/j.cap.2020.03.021 ↗
7. A. Teppe, C. Gong, K. Zhao, Progress in the industrial evaluation of the mc-Si PERCT technology based on boron diffusion. Energy Procedia 77, 208–214 (2015)10.1016/j.egypro.2015.07.029 ↗
8. R. Cabal, Y. Veschetti, V. Sanzone et al., Industrial process leading to 19.8% on N-type Cz silicon. Energy Procedia 33, 11–17 (2013)10.1016/j.egypro.2013.05.034 ↗
9. J. Armand, C. Oliver, F. Martinez, Modeling of the boron emitter formation process from BCl3 diffusion for N-type silicon solar cells processing. Adv Materials Res 324, 261–264 (2011)10.4028/www.scientific.net/AMR.324.261 ↗
10. R. J. Kriegler, Y. C. Cheng, D. R. Colton, The effect of HCI and on the thermal oxidation of silicon. J. EIectrochem. Soc. Solid State Sci. Technol., pp 388–392 (1972)10.1149/1.2404208 ↗
11. R. Amaro e Silva, Empirical optimization and implementationof a boron emitter on n-type silicon solar cells using a BBr3 liquid source. Mestrado Integrado em Engenharia da Energia e do Ambiente (2014)
12. A.M. Lin, R.W. Dutton, D.A. Antoniadis, The lateral effect of oxidation on boron diffusion in 〈100〉 silicon. Appl. Phys. Lett. 35(10), 799–801 (1979)10.1063/1.90941 ↗
13. A. Miin-Ron Lin, D. A. Antoniadis, R. W. Dutton, The oxidation rate dependence of oxidation-enhanced diffusion of boron and phosphorus in silicon (1981)
14. M. Miyake, Oxidation-enhanced diffusion of ion-implanted boron in heavily phosphorus-doped silicon. J. Appl. Phys. 58(2), 711–715 (1985)10.1063/1.336311 ↗
15. K. Taniguchi, K. Kurosawa, M. Kashiwagi, Oxidation enhanced diffusion of boron and phosphorus in (100) silicon. J. EIectrochem. Soc. (1980)10.1002/chin.198103007 ↗
16. D.A. Antoniadis, I. Moskowitz, Diffusion of substitutional impurities in silicon at short oxidation times: an insight into point defect kinetics. J. Appl. Phys. 53(10), 6788–6796 (1982)10.1063/1.330067 ↗
17. A. Miin-Ron Lin, D.A. Antoniadis, R.W. Dutton, The oxidation rate dependence of oxidation-enhanced diffusion of boron and phosphorus in silicon. J. Electrochem. Soc. 128(5), 1131–1137 (1981)10.1149/1.2127564 ↗
18. W. Kern, D.A. Puotinen, Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor technology. RCA Rev. 31, 187–206 (1970)
19. P.M. Prasad, V.P. Sundarsingh, Diffusion of boron into silicon from doped oxide source. Microelectron. J. 11(6), 21–24 (1980)10.1016/S0026-2692(80)80141-8 ↗
20. Y. Schiele, S. Fahr, S. Joos, et al. Study on boron emitter formation by BBR3 diffusion for n-type Si solar cell applications. in 28th European Photovoltaic Solar Energy Conference and Exhibition (2013)
21. E. Arai, H. Nakamura, Y. Terunuma, Interface reactions of B2O3-Si system and boron diffusion into silicon. J. Electrochem. Sac 120(7), 980–987 (1973)10.1149/1.2403611 ↗
22. M.A. Kessler, T. Ohrdes, B. Wolpensinger et al., Charge carrier lifetime degradation in Cz silicon through the formation of a boron-rich layer during BBr 3diffusion processes. Semiconductor Sci. Technol. 25(5), 055001 (2010)10.1088/0268-1242/25/5/055001 ↗
23. V. S. R. Monna, J. Diaz, Y. Veschetti, Influence of the BCl3 diffusion process homogeneity on the surface passivation of n-type PERT solar cells. in 6th International Conference on Silicon Photovoltaics (2016)10.1016/j.egypro.2016.07.130 ↗
24. J. Armand, C. Oliver, B. Semmache, Modelling and analysis of the emitter boron process under BCL3 and O2 for industrial silicon solar cells applications. in 26th European Photovoltaic Solar Energy Conference and Exhibition, pp. 1309–1312