On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements
Source abstract
Abstract
Abstract The present study aims to investigate the effect of (PVP: Sn-TeO2) interfacial layer on the electrical parameters of the Al/p-Si diode. For this aim, (Sn-TeO2) nanostructures were developed by the ultrasound-assisted method, and both their electrical and optical characteristics were investigated by XRD, SEM, EDS, and UV–Vis methods. The bandgap of Sn-TeO2was found as 4.65 eV from the (αhυ)2vs (hυ) plot. The main electrical parameters of the Al/p-Si diodes with/ without (PVP: Sn-TeO2) interlayer, such as ideality factor (n), zero-bias barrier height (Φ0), and series resistance (Rs), were calculated by applying and comparing two methods of thermionic emission theory and Cheung’s functions. These results show that the presence of the (PVP: Sn-TeO2interlayer, along with the increase of Φ0, and the decrease ofnandRs, led to a significant increment in the rectification of MPS when compared to MS diode. The current-transport mechanisms (CTMs) of them were examined through the forward LnIF− LnVFand reverse LnIR−VR0.5bias currents, and then, the Poole–Frenkel and Schottky field-lowering coefficients (β) were calculated and obtained its value from the theoretical and experimental methods showed that the mechanism of the reverse current of MS and MPS diodes is governing by the Schottky emission and Pool-Frenkel mechanism, respectively.
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OpenAlex topics: Semiconductor materials and interfaces · Semiconductor materials and devices · Silicon and Solar Cell Technologies
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References (40)
Show source-provided references
1. Y. Azizian-Kalandaragh, Dielectric properties of CdS-PVA nanocomposites prepared by ultrasound-assisted method. Optoelectron. Adv. Mater. Rapid Commun. 4, 1655–1658 (2010)
2. M. Yıldırım, Current conduction and steady-state photoconductivity in photodiodes with bismuth titanate interlayer. Thin Solid Films 615, 300–304 (2016)10.1016/j.tsf.2016.07.040 ↗
3. A. Buyukbas-Ulusan, İ Taşçıoğlu, A. Tataroğlu, F. Yakuphanoğlu, S. Altındal, A comparative study on the electrical and dielectric properties of Al/Cd-doped ZnO/p-Si structures. J. Mater. Sci. Mater. Electron. 30, 12122–12129 (2019)10.1007/s10854-019-01570-z ↗
4. A. Turut, M. Coșkun, F. Coșkun, O. Polat, Z. Durmuș, M. Çağlar, H. Efeoğlu, The current–voltage characteristics of the ferroelectric p-YMnO3 thin film/bulk p-Si heterojunction over a broad measurement temperature range. J. Alloy. Compd. 782, 566–575 (2019)10.1016/j.jallcom.2018.12.246 ↗
5. C. Sharma, A.K. Visvkarma, R. Laishram, A. Kumar, D.S. Rawal, S. Vinayak, R. Singh, Effect of γ-ray irradiation on Schottky and ohmic contacts on AlGaN/GaN hetero-structures. Microelectron. Reliab. 105, 113565 (2020)10.1016/j.microrel.2019.113565 ↗
6. İ. Taşçıoğlu, Ö. Sevgili, Y. Azizian-Kalandaragh, Ş. Altındal, Frequency-dependent admittance analysis of Au/n-Si structure with CoSO 4-PVP interfacial layer. J. Electron. Mater. 49, 3720–3727 (2020)10.1007/s11664-020-08091-0 ↗
7. S. Alptekin, Ş Altındal, A comparative study on current/capacitance: voltage characteristics of Au/n-Si (MS) structures with and without PVP interlayer. J. Mater. Sci. Mater. Electron. 30, 6491–6499 (2019)10.1007/s10854-019-00954-5 ↗
8. S. Altindal, J. Farazin, G. Pirgholi-Givi, E. Maril, Y. Azizian-Kalandaragh, The effects of (Bi2Te3–Bi2O3–TeO2-PVP) interfacial film on the dielectric and electrical features of Al/p-Si (MS) Schottky barrier diodes (SBDs). Phys. B 582, 411958 (2020)10.1016/j.physb.2019.411958 ↗
9. H.D. Jin, C.-H. Chang, Continuous synthesis of SnTe nanorods. J. Mater. Chem. 21, 12218–12220 (2011)10.1039/c1jm12211h ↗
10. G. Han, R. Zhang, S.R. Popuri, H.F. Greer, M.J. Reece, J.-W.G. Bos, W. Zhou, A.R. Knox, D.H. Gregory, Large-scale surfactant-free synthesis of p-type SnTe nanoparticles for thermoelectric applications. Mater. Today Proc. 10, 233 (2017)
11. Z. Liu, T. Yamazaki, Y. Shen, T. Kikuta, N. Nakatani, T. Kawabata, Room temperature gas sensing of p-type Te O 2 nanowires. Appl. Phys. Lett. 90, 173119 (2007)10.1063/1.2732818 ↗
12. S.S. Kim, J.Y. Park, S.-W. Choi, H.G. Na, J.C. Yang, D.S. Kwak, H.J. Nam, C.K. Hwangbo, H.W. Kim, Drastic change in shape of tetragonal TeO2 nanowires and their application to transparent chemical gas sensors. Appl. Surf. Sci. 258, 501–506 (2011)10.1016/j.apsusc.2011.08.081 ↗
13. R. Moshwan, L. Yang, J. Zou, Z.G. Chen, Eco-friendly SnTe thermoelectric materials: progress and future challenges. Adv. Funct. Mater. 27, 1703278 (2017)10.1002/adfm.201703278 ↗
14. Y. Azizian-Kalandaragh, A.S. Namini, Z. Ahmadi, M.S. Asl, Reinforcing effects of SiC whiskers and carbon nanoparticles in spark plasma sintered ZrB2 matrix composites. Ceram. Int. 44, 19932–19938 (2018)10.1016/j.ceramint.2018.07.258 ↗
15. M.S. Asl, Y. Azizian-Kalandaragh, Z. Ahmadi, A.S. Namini, A. Motallebzadeh, Spark plasma sintering of ZrB2-based composites co-reinforced with SiC whiskers and pulverized carbon fibers. Int. J. Refract. Metal Hard Mater. 83, 104989 (2019)10.1016/j.ijrmhm.2019.104989 ↗
16. T.P. Nguyen, S.A. Delbari, Y. Azizian-Kalandaragh, A. Babapoor, Q. Van Le, A.S. Namini, M. Shokouhimehr, M.S. Asl, Characteristics of quadruplet Ti–Mo–TiB2–TiC composites prepared by spark plasma sintering. Ceram. Int. 46, 20885–20895 (2020)10.1016/j.ceramint.2020.05.137 ↗
17. V.-H. Nguyen, S.A. Delbari, M.S. Asl, A.S. Namini, M.G. Kakroudi, Y. Azizian-Kalandaragh, Q. Van Le, M. Mohammadi, M. Shokouhimehr, Role of hot-pressing temperature on densification and microstructure of ZrB2–SiC ultrahigh temperature ceramics. Int. J. Refract. Metal Hard Mater. 93, 105355 (2020)10.1016/j.ijrmhm.2020.105355 ↗
18. F. Haaf, A. Sanner, F. Straub, Polymers of N-vinylpyrrolidone: synthesis, characterization and uses. Polym. J. 17, 143–152 (1985)10.1295/polymj.17.143 ↗
19. V. Bühler, Polyvinylpyrrolidone Excipients for Pharmaceuticals: Povidone, Crospovidone and Copovidone (Springer, Berlin, 2005)
20. Y. Shen, S. Zhao, J. Ma, X. Chen, W. Wang, D. Wei, S. Gao, W. Liu, C. Han, B. Cui, Highly sensitive and selective room temperature alcohol gas sensors based on TeO2 nanowires. J. Alloy. Compd. 664, 229–234 (2016)10.1016/j.jallcom.2015.12.247 ↗
21. Z. Ahmad, M. Sayyad, Electrical characteristics of a high rectification ratio organic Schottky diode based on methyl red. Optoelectro. Adv. Mater. Rapid Commun. 3, 509–512 (2009)
22. Ö. Sevgili, Y. Azizian-Kalandaragh, Ş. Altındal, Frequency and voltage dependence of electrical and dielectric properties in metal-interfacial layer-semiconductor (MIS) type structures. Physica B 587, 412122 (2020)10.1016/j.physb.2020.412122 ↗
23. Y. Azizian-Kalandaragh, J. Farazin, Ş Altindal, M.S. Asl, G. Pirgholi-Givi, S.A. Delbari, A.S. Namini, Electrical and dielectric properties of Al/(PVP: Zn–TeO2)/p-Si heterojunction structures using current–voltage (I–V) and impedance-frequency (Z–f) measurements. Appl. Phys. A 126, 1–11 (2020)10.1007/s00339-020-03804-y ↗
24. Y. Badali, Y. Azizian-Kalandaragh, E.A. Akhlaghi, Ş Altındal, Ultrasound-assisted method for preparation of Ag2S nanostructures: fabrication of Au/Ag2S-PVA/n-Si Schottky barrier diode and exploring their electrical properties. J. Electron. Mater. 49, 444–453 (2020)10.1007/s11664-019-07708-3 ↗
25. F. Aslan, H. Esen, F. Yakuphanoglu, Al/P-Si/Coumarin: TiO2/Al organic-inorganic hybrid photodiodes: investigation of electrical and structural properties. Silicon. 12, 2149–2164 (2020)10.1007/s12633-019-00306-2 ↗
26. Ç.G. Türk, S.O. Tan, Ş. Altındal, B. İnem, Frequency and voltage dependence of barrier height, surface states, and series resistance in Al/Al2O3/p-Si structures in wide range frequency and voltage. Physica B. 582, 411979 (2020)10.1016/j.physb.2019.411979 ↗
27. A. Di Bartolomeo, F. Giubileo, G. Luongo, L. Iemmo, N. Martucciello, G. Niu, M. Fraschke, O. Skibitzki, T. Schroeder, G. Lupina, Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device. 2D Mater. 4, 015024 (2016)10.1088/2053-1583/4/1/015024 ↗
28. K. Sreenu, C.V. Prasad, V.R. Reddy, Barrier parameters and current transport characteristics of Ti/p-InP Schottky junction modified using orange G (OG) organic interlayer. J. Electron. Mater. 46, 5746–5754 (2017)10.1007/s11664-017-5611-9 ↗
29. A. Buyukbas-Ulusan, S. Altındal-Yerişkin, A. Tataroğlu, Forward and reverse bias current–voltage (I–V) characteristics in the metal–ferroelectric–semiconductor (Au/SrTiO3/n-Si) structures at room temperature. J. Mater. Sci. Mater. Electron. 29, 16740–16746 (2018)10.1007/s10854-018-9767-8 ↗
30. V.R. Reddy, V. Manjunath, V. Janardhanam, Y.-H. Kil, C.-J. Choi, Electrical properties and current transport mechanisms of the Au/n-GaN Schottky structure with solution-processed high-k BaTiO3 interlayer. J. Electron. Mater. 43, 3499–3507 (2014)10.1007/s11664-014-3177-3 ↗
31. V. Manjunath, V.R. Reddy, P.S. Reddy, V. Janardhanam, C.-J. Choi, Electrical and frequency-dependent properties of Au/Sm2O3/n-GaN MIS junction with a high-k rare-earth Sm2O3 as interlayer. Curr. Appl. Phys. 17, 980–988 (2017)10.1016/j.cap.2017.03.023 ↗
32. S.A. Yerişkin, M. Balbaşı, İ Orak, The effects of (graphene doped-PVA) interlayer on the determinative electrical parameters of the Au/n-Si (MS) structures at room temperature. J. Mater. Sci. Mater. Electron. 28, 14040–14048 (2017)10.1007/s10854-017-7255-1 ↗
33. E.A. Akhlaghi, Y. Badali, S. Altindal, Y. Azizian-Kalandaragh, Preparation of mixed copper/PVA nanocomposites as an interface layer for fabrication of Al/Cu-PVA/p-Si Schottky structures. Phys. B 546, 93–98 (2018)10.1016/j.physb.2018.06.019 ↗
34. Y. Badali, A. Nikravan, Ş Altındal, İ Uslu, Effects of a thin Ru-doped PVP interface layer on electrical behavior of Ag/n-Si structures. J. Electron. Mater. 47, 3510–3520 (2018)10.1007/s11664-018-6195-8 ↗
35. Ş Altındal, Ö. Sevgili, Y. Azizian-Kalandaragh, A comparison of electrical parameters of Au/n-Si and Au/(CoSO4–PVP)/n-Si structures (SBDs) to determine the effect of (CoSO4–PVP) organic interlayer at room temperature. J. Mater. Sci. Mater. Electron. 30, 9273–9280 (2019)10.1007/s10854-019-01257-5 ↗
36. Ç. Bilkan, Y. Azizian-Kalandaragh, Ö. Sevgili, Ş Altındal, Investigation of the efficiencies of the (SnO2-PVA) interlayer in Au/n-Si (MS) SDs on electrical characteristics at room temperature by comparison. J. Mater. Sci. Mater. Electron. 30, 20479–20488 (2019)10.1007/s10854-019-02395-6 ↗
37. V.R. Reddy, C.-J. Choi, Microstructural, chemical and electrical characteristics of Au/magnetite (Fe3O4)/n-GaN MIS junction with a magnetite interlayer. Vacuum 164, 233–241 (2019)10.1016/j.vacuum.2019.03.025 ↗
38. S.A. Yerişkin, Effects of (0.01 Ni-PVA) interlayer, interface traps (Dit), and series resistance (Rs) on the conduction mechanisms (CMs) in the Au/n-Si (MS) structures at room temperature. Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi 9, 835–846 (2019)10.21597/jist.521351 ↗
39. N. Baraz, İ Yücedağ, Y. Azizian-Kalandaragh, G. Ersöz, I. Orak, Ş Altındal, B. Akbari, H. Akbari, Electric and dielectric properties of Au/ZnS-PVA/n-Si (MPS) structures in the frequency range of 10–200 kHz. J. Electron. Mater. 46, 4276–4286 (2017)10.1007/s11664-017-5363-6 ↗
40. A.B. Uluşan, A. Tataroğlu, Y. Azizian-Kalandaragh, Ş Altındal, On the conduction mechanisms of Au/(Cu2O–CuO–PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current–voltage–temperature (I–V–T) characteristics. J. Mater. Sci. Mater. Electron. 29, 159–170 (2018)10.1007/s10854-017-7900-8 ↗