Impact of threshold voltage variation on 1S1R crossbar array with threshold switching selectors
Source abstract
Abstract
It is important that selector achieves voltage compatibility with paired resistive random access memory element. Nevertheless, unsatisfactory uniformity existing in practical selector devices will lead to serious problems during operation. This paper investigates the potential impact of threshold voltage variation on crossbar array with one-selector one-resistor cell. We prove that large variation of threshold voltage may lead to unintentional writing during read process. Therefore, we propose a method to determine selectors’ threshold voltage range within 1/2 or 1/3 bias scheme. Results indicate tolerable threshold voltage range basically expands with the increasing OFF-resistance or decreasing ON-resistance of selectors. The proposed method gives a guideline for choosing and fabricating appropriate selectors for RRAM elements with specific parameters.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (30)
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