Deposition and characterization of spin-coated n-type ZnO thin film for potential window layer of solar cell
Source abstract
Abstract
Spin-coating technique has been utilized to deposit ZnO thin films on ITO substrates. The dependence of the structural, optical, and electrical properties of the prepared films on both the sol–pH values and annealing temperatures has been investigated. X-ray diffraction analysis has revealed that the optimal sol–pH value was found to be 8 at annealing temperature 450 °C. At these conditions, the optical transmission and reflection data have also shown a clear enhancement in both the morphology and the grain size of the films. In addition, the analysis of I–V and C–V measurements of the Schottky Au/ZnO diode has shown a high agreement with both the investigated structural and optical properties. Furthermore, a new empirical method based on the calculated electrical parameters in the context of both the thermionic emission and Mott–Schottky models has been proposed to evaluate the approximate value of the electron effective mass in the conduction band of the ZnO (m* = 0.224 mo).
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Chalcogenide Semiconductor Thin Films · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (43)
Show source-provided references
1. D.R. Sahu, J.L. Huang, Mater. Sci. Eng. B 130, 295 (2006)10.1016/j.mseb.2006.03.003 ↗
2. H. Kim, J.S. Horowitz, S.B. Quadri, D.B. Chrisey, Thin Solid Films 420, 107 (2002)10.1016/S0040-6090(02)00658-2 ↗
3. R.L. Hoffman, B.J. Norris, J.F. Wager, Appl. Phys. Lett. 82, 733 (2003)10.1063/1.1542677 ↗
4. A.P. Chatterjee, P.M. Mitra, A.K. Mukhopadhyay, J. Mater. Sci. 34, 4225 (1999)10.1023/A:1004694501646 ↗
5. T. Minami, T. Miyata, K. Ihara, Y. Minamino, S. Tsukada, Thin Solid Films 494, 47 (2006)10.1016/j.tsf.2005.07.167 ↗
6. J.S. Parka, T.W. Kim, D. Stryakhilev, J.S. Lee, Appl. Phys. Lett. 95, 503 (2009)
7. B. Lin, Z. Fu, Y. Jia, Appl. Phys. Lett. 79, 943 (2001)10.1063/1.1394173 ↗
8. V. Srikant, D.R. Clarke, J. Appl. Phys. 81, 6357 (1997)10.1063/1.364393 ↗
9. C.Y. Chen, J.R.D. Retamal, I. W.Wu, D.H. Lien, M.-W. Chen, Y. Ding, ACS Nano 6, 9366 (2012)10.1021/nn205097e ↗
10. E.R. Rwenyagila, B. Agyei-Tuffour, M.G.Z. Kana, J. Mater. Res. 29, 2912 (2014)10.1557/jmr.2014.298 ↗
11. K. Sivaramakrishnan, T. Alford, Appl. Phys. Lett. 96, 63 (2010)10.1063/1.3435467 ↗
12. M.F. Al-Kuhaili, M.A. Al-Maghrabi, S.M.A. Durrani, J. Phys. D Appl. Phys. 41, 302 (2008)10.1088/0022-3727/41/21/215302 ↗
13. J.M. Bian, X.M. Li, X.D. Gao, W.D. Yu, L.D. Chen, Appl. Phys. Lett. 84, 541 (2004)10.1063/1.1644331 ↗
14. A. El Hichou, M. Addou, A. Bougrine, R. Dounia, J. Eboth, M. Troyon, Mater. Chem. Phys. 83, 43 (2004)10.1016/j.matchemphys.2003.08.015 ↗
15. A. El Hichou, N. Diliberto, Stein, Surf. Coat. Technol. 270, 236 (2015)10.1016/j.surfcoat.2015.02.051 ↗
16. D.W. Kang, S.H. Kuk, K.S. Ji, H. Lee, Sol. Energy Mater. Sol. Cells 95, 138 (2011)10.1016/j.solmat.2010.04.068 ↗
17. H.M. Zhou, D.Q. Yi, Z.M. Yu, Thin Solid Films 515, 6909 (2007)10.1016/j.tsf.2007.01.041 ↗
18. D. Raoufi, T. Raoufi, Appl. Surf. Sci. 255, 5812 (2009)10.1016/j.apsusc.2009.01.010 ↗
19. N. Shakti, P.S. Gupta, Appl. Phys. Res. 2, 19 (2010)10.5539/apr.v2n1p19 ↗
20. S.T. Rattanachan, P. Krongarrom, T. Fangsuwannarak, Am. J. Appl. Sci. 10(11), 1427 (2013)10.3844/ajassp.2013.1427.1438 ↗
21. V. Kumar, L.P. Purohit, R.M. Mehra, ICOP 2009-International Conference on Optics and Photonics, Chandigarh, India, 30 Oct.-1 Nov. (2009)
22. A. Mahroug, S. Boudjadar, S. Hamrit, L. Guerbous, Mater. Lett. 134, 248 (2014)10.1016/j.matlet.2014.07.099 ↗
23. B.D. Cullity, Elements of X-ray Diffraction. Addison-Wesley Publishing Company, Inc, New York (1978)
24. R. Tripathi, A. Kumar, C. Bharti, T.P. Sinha, Curr. Appl. Phys. 10, 676 (2010)10.1016/j.cap.2009.08.015 ↗
25. M.M. El-Nahass, A.A.M. Farag, E.M. Ibrahim, S. Abd-el-Rahman, Vacuum. 72 (2004) 45310.1016/j.vacuum.2003.10.005 ↗
26. A. Boukhachem, B. Ouni, M. Karyaoui, A. Madani, R. Chtourou, M. Amlouk, Mater. Sci. Semicond. Process. 15, 282 (2012)10.1016/j.mssp.2012.02.014 ↗
27. S. Lalitha, R. Sathyamoorthy, S. Senthilarasu, A. Subbarayan, K. Natarajan, Sol. Energy Mater. Solar Cells 82, 187 (2004)10.1016/j.solmat.2004.01.017 ↗
28. J. Tauc, R. Grigorovici, A. Vancu, Physica Status Solidi (b) 15, 627 (1966)10.1002/pssb.19660150224 ↗
29. Z.Z. You, G.J. Hua, J. Alloys Compd. 530, 11 (2012)10.1016/j.jallcom.2012.03.078 ↗
30. R. Ebrahimifard, M.R. Golobostanfard, H. Abdizadeh, Appl. Surf. Sci. 290, 252 (2014)10.1016/j.apsusc.2013.11.062 ↗
31. X.L. Chen, J.M. Liu, J. Ni, Y. Zhao, Appl. Surf. Sci 328, 193 (2015)10.1016/j.apsusc.2014.12.018 ↗
32. S.S. Shinde, P.S. Shinde, Y.W. Oh, D. Haranath, C.H. Bhosale, Appl. Surf. Sci. 258, 9969 (2012)10.1016/j.apsusc.2012.06.058 ↗
33. S. Belgacem, R. Bennaceur, Rev. Phys. Appl. 25, 1245 (1990)10.1051/rphysap:0199000250120124500 ↗
34. J.I. Pankove, Optical Processes in Semiconductors. Dover Publications, New York (1971)
35. R.K. JoydipSengupta, K.K. Sahoo, C.D. Bardhan Mukherjee, Mater. Lett. 65, 2572 (2011)10.1016/j.matlet.2011.06.021 ↗
36. Q. He, W. Mu, H. Dong, S. Long, Z. Jia, H. Lv, Q. Liu, M. Tang, X. Tao, M. Liu, Appl. Phys. Lett. 110, 093503 (2017). https://doi.org/10.1063/1.497776610.1063/1.4977766 ↗
37. S.K. Cheung, N.W. Cheung, Appl. Phys. Lett. 49, 85 (1986)10.1063/1.97359 ↗
38. H.B. Michaelson, J. Appl. Phys. 48, 4729 (1977)10.1063/1.323539 ↗
39. M. Wei, C.-F. Li, X.-R. Deng, H. Deng, Energy Proc. 16, 76 (2012)10.1016/j.egypro.2012.01.014 ↗
40. A. Mhamdi, M. Amlouk, S. Amlouk, Belgacem, J. Alloy. Compd. 610, 250 (2014)10.1016/j.jallcom.2014.04.007 ↗
41. H.-C. Wu, Y.-C. Peng, T.-P. Shen, Materials 5, 2088 (2012)10.3390/ma5112088 ↗
42. A. AbdolahzadehZiabari, S.M. Rozati, Phys. B 407, 4512 (2012)10.1016/j.physb.2012.08.024 ↗
43. K. Ellmer, J. Phys. D Appl. Phys. 34, 3097 (2001)10.1088/0022-3727/34/21/301 ↗