Grain boundary defect compensation in Ti-doped BaFe0.5Nb0.5O3 ceramics
Source abstract
Abstract
Giant dielectric ceramics Ba(Nb0.5Fe0.5-x Ti x )O3 (BNFT) have been fabricated by a conventional solid-state reaction. According to X-ray diffraction analysis, the crystal structure of these ceramics can be described by the cubic centrosymmetric with Pm-3m space group. The real part (e’) of dielectric permittivity and dielectric loss (tanδ) of the BNFT ceramics was measured in a frequency range from 40 Hz to 100 MHz at room temperature. The (e’) of all these samples displays a high value (~6500) and a small frequency-dependence from 1 kHz to 1 MHz. We have established a link between conductivity activation energy and defect compensation at grain boundaries. The Ti4+-doped Ba(Nb0.5Fe0.5)O3 as a donor makes a great influence on the grain boundary behavior, which restricts the migration of oxygen vacancy and depresses dielectric loss factor for Ba(Nb0.5Fe0.5)O3 ceramics.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Dielectric properties of ceramics · Ferroelectric and Piezoelectric Materials · Microwave Dielectric Ceramics Synthesis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (22)
Show source-provided references
1. C.C. Homes, T. Vogt, S.M. Shapiro, S. Wakimoto, A.P. Ramirez, Science 293, 673 (2001)10.1126/science.1061655 ↗
2. S.Y. Chung, I.D. Kim, S.J. Kang, Nat. Mater. 3, 774 (2004)10.1038/nmat1238 ↗
3. S. Saha, T.P. Sinha, J. Phys.: Condens. Matter 14, 249 (2002)
4. Z. Wang, X.M. Chen, L. Ni, X.Q. Liu, Appl. Phys. Lett. 90, 022904 (2007)10.1063/1.2430939 ↗
5. F. Zhao, Z. Yue, J. Pei, D. Yang, Z. Gui, L. Li, Appl. Phys. Lett. 91, 052903 (2007)10.1063/1.2767190 ↗
6. S. Saha, T.P. Sinha, Phys. Rev. B 65, 134103 (2002)10.1103/PhysRevB.65.134103 ↗
7. P.K. Patel, K.L. Yadav, H. Singh, A.K. Yadav, J. Alloys Compd. 591, 224 (2014)10.1016/j.jallcom.2013.12.119 ↗
8. I.P. Raevski, S.A. Prosandeev, A.S. Bogatin, M.A. Malitskaya, L. Jastrabik, J. Appl. Phys. 93, 4130 (2003)10.1063/1.1558205 ↗
9. Y.M. Huang, D.P. Shi, L.J. Liu, G.Z. Li, S.Y. Zheng, L. Fang, Appl. Phys. A 114, 891 (2014)10.1007/s00339-013-7735-y ↗
10. G.D. Dwivedi, A.G. Joshi, H. Kevin, P. Shahi, A. Kumar, A.K. Ghosh, H.D. Yang, S. Chatterjee, Solid State Commun. 152, 360 (2012)10.1016/j.ssc.2011.12.013 ↗
11. M. Gangulya, S. Paridaa, E. Sinhaa, S.K. Routa, A.K. Simanshub, A. Hussainc, I.W. Kimc, Mater. Chem. Phys. 131, 535 (2011)10.1016/j.matchemphys.2011.10.017 ↗
12. L.J. Liu, H.Q. Fan, L. Wang, X.L. Chen, P.Y. Fang, Philos. Mag. 88, 537 (2008)10.1080/14786430801894551 ↗
13. M. Pastor, J. Alloys Compd. 463, 323 (2008)10.1016/j.jallcom.2007.09.022 ↗
14. L.J. Liu, Y.M. Huang, C.X. Su, L. Fang, M.X. Wu, C.Z. Hu, Appl. Phys. A 104, 1047 (2011)10.1007/s00339-011-6358-4 ↗
15. S.R. Elliott, Adv. Phys. 36, 135 (1987)10.1080/00018738700101971 ↗
16. A.R. Long, Adv. Phys. 31, 553 (1982)10.1080/00018738200101418 ↗
17. A.K. Jonscher, Dielectric relaxation in solids (London: Chelsea). J. Phys. D Appl. Phys. 32, 57 (1999)10.1088/0022-3727/32/14/201 ↗
18. A.K. Jonscher, Nature 267, 673 (1977)10.1038/267673a0 ↗
19. A.K. Jonscher, J. Mater. Sci. 16, 2037 (1981)10.1007/BF00542364 ↗
20. G.Z. Li, Z. Chen, X.J. Sun, L.J. Liu, L. Fang, B. Elouadi, Mater. Res. Bull. 65, 260 (2015)10.1016/j.materresbull.2015.02.012 ↗
21. K. Kalantari, I. Sterianou, S. Karimi, M.C. Ferrarelli, S. Miao, D.C. Sinclair, L.M. Reaney, Adv. Funct. Mater. 21, 3737 (2011)10.1002/adfm.201100191 ↗
22. P.F. Liang, Y.Y. Li, Y.Q. Zhao, L.L. Wei, Z.P. Yang, J. Appl. Phys. 113, 224102 (2013)10.1063/1.4809927 ↗