Photoluminescence of sol–gel-derived Y2O3:Eu3+ thin-film phosphors with Mg2+ and Al3+ co-doping
Source abstract
Abstract
Red-light-emitting Y2O3:Eu3+ thin-film phosphors were synthesized using a sol–gel process. The effect of Mg2+ and Al3+ co-dopants on the Y2O3:Eu3+ thin-film phosphor photoluminescence (PL) property was investigated. At a certain concentration, both Mg2+ and Al3+ co-dopants were found to further enhance the PL emission intensity of Y2O3:Eu3+ thin-film phosphors. The optimum PL emission intensity was observed in Y2O3:12%Eu3+, 7%Mg2+ and Y2O3:12%Eu3+, 2%Al3+ phosphor films. From our results, the enhancement of the emission intensity by the Mg2+ and Al3+ co-dopants is explained in terms of the creation of defect states near the Y(4d+5s) conduction band, which overlap with the Eu3+ charge-transfer state (CTS). The overlapping leads to CTS broadening and consequently induces higher absorption and hence an increase of the emission intensity. From X-ray diffraction results, we have found that there is no additional phase formed in the co-doped phosphor films.
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Research context
OpenAlex topics: Luminescence Properties of Advanced Materials · Perovskite Materials and Applications · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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