The effect of pre-annealing of sputtered ZnO seed layers on growth of ZnO nanorods through a hydrothermal method
Source abstract
Abstract
Oriented ZnO nanorods were grown on ion-beam-sputtered ZnO seed layers through a hydrothermal approach without any metal catalyst. The sputtered ZnO seed layers were pre-annealed at different temperatures before the growth of ZnO nanorods. The effects of pre-annealing of the ZnO seed layers on the growth rate, crystallinity and optical properties of ZnO nanorods thereon were studied. The obtained ZnO nanorods had a wurtzite structure and grew along the preferential [0001] orientation with a normal direction to the substrates. Results show that the growth rate and density of the ZnO nanorods strongly depend on the pre-treatment conditions of the ZnO seed layer. With higher pre-treatment temperature, the crystallinity and surface characteristics of the ZnO seed layer were improved and thereafter the growth rate of ZnO nanorods thereon increased. Photoluminescence spectroscopy results show that the UV emission also becomes stronger and sharper with increasing annealing temperature of the ZnO seed layer.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (37)
Show source-provided references
1. K. Nakahara, H. Takasu, P. Fons, A. Yamada, K. Iwata, K. Matsubara, R. Hunger, S. Niki, Appl. Phys. Lett. 79, 4139 (2001)10.1063/1.1424066 ↗
2. Z.K. Tang, G.K.L. Wong, P. Yu, M. Kawasaki, A. Ohtomo, H. Koinuma, Y. Segawa, Appl. Phys. Lett. 72, 3270 (1998)10.1063/1.121620 ↗
3. U. Ozgur, Y.I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, S. Dogan, V. Avrutin, S.J. Cho, H. Morko, J. Appl. Phys. 98, 041301 (2005)10.1063/1.1992666 ↗
4. D.M. Bagnall, Y.F. Chen, Z. Zhu, T. Yao, S. Koyama, M.Y. Shen, T. Goto, Appl. Phys. Lett. 70, 2230 (1997)10.1063/1.118824 ↗
5. Y.W. Heo, D.P. Norton, L.C. Tien, Y. Kwon, B.S. Kang, F. Ren, S.J. Pearton, J.R. LaRoche, Mater. Sci. Eng. R 47, 1 (2004)10.1016/j.mser.2004.09.001 ↗
6. M.H. Huang, S. Mao, H.Q. Feick, H.Q. Yan, Y.Y. Wu, H. Kind, E. Weber, R. Russo, P.D. Yang, Science 292, 1897 (2001)10.1126/science.1060367 ↗
7. H. Rensmo, K. Keis, H. Lindstrolm, S. Soldergren, A. Solbrand, A. Hagfeldt, S.E. Lindquist, L.N. Wang, M. Muhammed, J. Phys. Chem. B 101, 2598 (1997)10.1021/jp962918b ↗
8. L. Liao, H.B. Lu, J.C. Li, C. Liu, D.J. Fu, Appl. Phys. Lett. 91, 173110 (2007)10.1063/1.2800812 ↗
9. S. Liang, H. Sheng, Y. Liu, Z. Hio, Y. Lu, H. Shen, J. Cryst. Growth 225, 110 (2001)10.1016/S0022-0248(01)00830-2 ↗
10. D.K. Hwang, S.H. Kang, J.H. Lim, E.G. Yang, J.Y. Oh, J.H. Yang, S.J. Park. Appl. Phys. Lett. 86, 222101 (2005)10.1063/1.1940736 ↗
11. N.W. Emanetoglu, J. Zhu, Y. Chen, J. Zhong, Y.M. Chen, Y.C. Lu, Appl. Phys. Lett. 85, 3702 (2004)10.1063/1.1811383 ↗
12. W.I. Park, G.C. Yi, Adv. Mater. 16, 87 (2004)10.1002/adma.200305729 ↗
13. J. Nayak, S.N. Sahu, J. Kasuya, S. Nozaki, J. Phys. D: Appl. Phys. 41, 115303 (2008)10.1088/0022-3727/41/11/115303 ↗
14. M. Huang, Y. Wu, H. Feick, N. Tran, E. Weber, P.D. Yang, Adv. Mater. 13, 113 (2001)10.1002/1521-4095(200101)13:2<113::AID-ADMA113>3.0.CO;2-H ↗
15. J.H. Choi, H. Tabata, T. Kawai, J. Cryst. Growth 226, 493 (2001)10.1016/S0022-0248(01)01388-4 ↗
16. T. Martensson, P. Carlberg, M. Borgstrom, L. Montelius, W. Seifert, L. Samuelson, Nano Lett. 4, 699 (2004)10.1021/nl035100s ↗
17. X. Wang, C.J. Summers, Z.L. Wang, Nano Lett. 4, 423 (2004)10.1021/nl035102c ↗
18. L. Vayssieres. Adv. Mater. 15, 464 (2003)10.1002/adma.200390108 ↗
19. M.H. Sun, Q.F. Zhang, J.L. Wu, J. Phys. D: Appl. Phys. 40, 3798 (2007)10.1088/0022-3727/40/12/036 ↗
20. J.B. Cui, C.P. Daghlian, U.J. Gibson, R. Pusche, P. Geithner, L. Ley, J. Appl. Phys. 97, 44315 (2005)10.1063/1.1854206 ↗
21. P.X. Gao, J.H. Song, J. Liu, Z.L. Wang, Adv. Mater. 19, 67 (2003)10.1002/adma.200601162 ↗
22. J.S. Huang, C.F. Lin, J. Appl. Phys. 103, 014304 (2008)10.1063/1.2828172 ↗
23. T. Ma, M. Guo, M. Zhang, Y.J. Zhang, X.D. Wang, Nanotechnology 18, 035605 (2007)10.1088/0957-4484/18/3/035605 ↗
24. J.J. Song, S. Lim, J. Phys. Chem. C 111, 596 (2007)10.1021/jp0655017 ↗
25. Z.L. Wang, J. Phys.: Condens. Matter 16, R829 (2004)
26. A. Dev, S.K. Panda, S. Kar, S. Chakrabarti, S. Chaudhuri, J. Phys. Chem. B 110, 14266 (2006)10.1021/jp062729l ↗
27. X.Q. Wei, B.Y. Man, M. Liu, C.S. Xue, H.Z. Zhuang, C. Yang, Physica B 388, 145 (2007)10.1016/j.physb.2006.05.346 ↗
28. M. Chen, X. Wang, Y.H. Yu, Z.L. Pei, X.D. Bai, C. Sun, R.F. Huang, L.S. Wen, Appl. Surf. Sci. 158, 134 (2000)10.1016/S0169-4332(99)00601-7 ↗
29. P.C. Chang, C.J. Chien, D. Stichtenoth, C. Ronning, J.G. Lu, Appl. Phys. Lett. 90, 113101 (2007)10.1063/1.2712507 ↗
30. Y.H. Yang, X.Y. Chen, Y. Feng, G.W. Yang, Nano Lett. 7, 3879 (2007)10.1021/nl071849h ↗
31. D. Li, Y.H. Leung, A.B. Djurisic, Z.T. Liu, M.H. Xie, S.L. Shi, S.J. Xu, W.K. Chan, Appl. Phys. Lett. 85, 1601 (2004)10.1063/1.1786375 ↗
32. A.B. Djurisic, Y.H. Leung, K.H. Tam, L. Ding, W.K. Ge, H.Y. Chen, S. Gwo, Appl. Phys. Lett. 88, 103107 (2006)10.1063/1.2182096 ↗
33. L.E. Greene, M. Law, J. Goldberger, F. Kim, J.C. Johnson, Y. Zhang, R. Saykally, P.D. Yang, Angew. Chem. Int. Ed. 42, 3031 (2003)10.1002/anie.200351461 ↗
34. X.L. Wu, G.G. Siu, C.L. Fu, H.C. Ong, Appl. Phys. Lett. 78, 2285 (2001)10.1063/1.1361288 ↗
35. W.M. Kwok, A.B. Djurišić, Y.H. Leung, D. Li, K.H. Tam, D.L. Phillips, W.K. Chan, Appl. Phys. Lett. 89, 183112 (2006)10.1063/1.2378560 ↗
36. N.S. Norberg, D.R. Gamelin, J. Phys. Chem. B 109, 20810 (2005)10.1021/jp0535285 ↗
37. R. Xie, T. Sekiguchi, T. Ishigaki, N. Ohashi, D. Li, D. Yang, B. Liu, B.Y. Bando, Appl. Phys. Lett. 88, 134103 (2006)10.1063/1.2189200 ↗