Heusler-alloy films for spintronic devices
Source abstract
Abstract
The next generation of magnetic memories requires an ideal spin-polarised electron source, achievable by using a half-metallic Heusler-alloy film. For Heusler-alloy film implementation, it is critical to realise both large volumes of coherent magnetisation reversal and high interfacial atomic ordering. In this review we present solutions to satisfy these requirements by measuring activation volumes and observing cross-sectional atomic structures. We find that polycrystalline thin films possess 10 times larger activation volumes than epitaxial ones and also form the perfectly ordered crystalline phase. These features are very useful for the application of Heusler-alloy films in a future magnetic memory.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Heusler alloys: electronic and magnetic properties · Magnetic properties of thin films · Magnetic and transport properties of perovskites and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (27)
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