Thermal equilibrium concentrations and effects of negatively charged Ga vacancies in n-type GaAs
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (29)
Show source-provided references
1. T.Y. Tan, U.M. G�sele: Appl. Phys. Lett. 52, 1240 (1988)10.1063/1.99168 ↗
2. S Yu, U.M. G�sele, T.Y. Tan: J. Appl. Phys. 66, 2952 (1989)10.1063/1.344176 ↗
3. P. Mei, H.W. Yoon, T. Venkatesan, S.A. Schwarz, J.P. Harbion: Appl. Phys. Lett. 50, 1823 (1987)10.1063/1.97709 ↗
4. T.Y. Tan, H.-M. You, S. Yu, U.M. G�sele, W. J�ger, D.W. Boeringer, F. Zypman, R. Tsu, S.-T. Lee: J. Appl. Phys. 72, 5206 (1992)10.1063/1.352002 ↗
5. H.-M. You, U.M. G�sele, T.Y. Tan: Submitted to J. Appl. Phys. (1992)
6. T.Y. Tan, U.M. G�sele, S. Yu: Crit. Rev. Solid State Mater. Sci. 17, 47 (1991)10.1080/10408439108244631 ↗
7. T.Y. Tan: Mater. Sci. Eng. B 10, 227 (1991)10.1016/0921-5107(91)90130-N ↗
8. J.A. van Vechten: J. Electrochem. Soc. 122, 419 (1975)10.1149/1.2134226 ↗
9. W. Schockley, J.T. Last: Phys. Rev. 107, 392 (1957)10.1103/PhysRev.107.392 ↗
10. G.A. Baraff, M. Schl�ter: Phys. Rev. Lett. 55, 1327 (1985)10.1103/PhysRevLett.55.1327 ↗
11. J.R. Arthur: J. Phys. Chem. Solids 28, 2257 (1967)10.1016/0022-3697(67)90251-X ↗
12. W.G. Spitzer, W. Allred: J. Appl. Phys. 39, 4999 (1968)10.1063/1.1655899 ↗
13. C.J. Hwang: J. Appl. Phys. 39, 5347 (1968)10.1063/1.1655980 ↗
14. M. Uematsu, K. Maezawa: Jpn. J. Appl. Phys. 29, L527 (1990)10.1143/JJAP.29.L527 ↗
15. G.M. Williams, A.G. Cullis, D.J. Stirland: Appl. Phys. Lett. 59, 2585 (1991)10.1063/1.105910 ↗
16. A.G. Cullis, P.D. Augustus, D.J. Stirland: J. Appl. Phys. 51, 2556 (1980)10.1063/1.327979 ↗
17. B.-T. Lee, R. Gronsky, E.D. Bourret: J. Appl. Phys. 64, 114 (1988)10.1063/1.341453 ↗
18. P. Petroff, R.L. Hartman: J. Appl. Phys. 45, 3899 (1974)10.1063/1.1663883 ↗
19. P.W. Hutchinson, P.S. Dobson: Appl. Phys. Lett. 26, 250 (1975)10.1063/1.88139 ↗
20. S. Yu, T.Y. Tan, U.M. G�sele: J. Appl. Phys. 69, 3547 (1991)10.1063/1.348497 ↗
21. S. O'Hara, P.W. Hutchinson, P.S. Dobson: Appl. Phys. Lett. 30, 368 (1977)10.1063/1.89432 ↗
22. For a review, see O. Ueda: J. Electrochem. Soc. 135, 12C (1988)10.1149/1.2095535 ↗
23. P.W. Hutchinson, P.S. Dobson, B. Wakefield, S. O'Hara: Solid-State Electron. 21, 1413 (1978)10.1016/0038-1101(78)90217-4 ↗
24. M. Uematsu, K. Wada: Appl. Phys. Lett. 58, 2015 (1991)10.1063/1.105025 ↗
25. M. Uematsu, K. Wada: Mater. Sci. Forum 83?87, 1551 (1992)10.4028/www.scientific.net/MSF.83-87.1551 ↗
26. M. Uematsu, K. Yamada, K. Wada: J. Appl. Phys. 72, 2520 (1992)10.1063/1.351548 ↗
27. E. Gurrero, H. P�tzl, R. Tielert, M. Grasserbauer, G. Stingeder: J. Electrochem. Soc. 129, 1827 (1982)
28. P.E. Andersen, A.W. Larsen, P. Tidemand-Peterson, G. Weger: Appl. Phys. Lett. 53, 755 (1988)10.1063/1.99823 ↗
29. K. Kurishima, T. Kobayashi, U. G�sele: Appl. Phys. Lett. 60, 2496 (1992)10.1063/1.106945 ↗