DataVXApplied Physics A: Materials Science & ProcessingPaper
journal article·2004-03-01

ZnO nanowalls

J.Y. Lao, J.Y. Huang, D.Z. Wang, Z.F. Ren, D. Steeves, B. Kimball, W. Porter

Applied Physics A: Materials Science & Processing· Volume 78· Issue 4
Publisher page
Source abstract

Abstract

Wurtzite ZnO nanowall structures have been synthesized on a (110) Al2O3 substrate by a thermal evaporation and condensation method. The nanowalls are connected to each other and have a thickness of about 20–100 nm. An excellent epitaxial relationship with the substrate has been observed by X-ray diffraction. Edge-dislocation dipoles were observed by transmission electron microscopy. Photoluminescence measurements show strong UV emission at 390 nm for the white-gray nanowalls grown at high temperature, and very weak UV emission for the reddish nanowalls grown at low temperature.
Source: expertdata · Quality: candidate unverified · Source record ↗

Research context

Nanomaterials

OpenAlex topics: ZnO doping and properties · GaN-based semiconductor devices and materials

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